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参数资料
| 型号： | HUF75345S3 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 8/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 75A D2PAK |
| 标准包装： | 400 |
| 系列： | UltraFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 75A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7 毫欧 @ 75A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 275nC @ 20V |
| 输入电容 (Ciss) @ Vds： | 4000pF @ 25V |
| 功率 - 最大： | 325W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 管件 |
HUF75345G3, HUF75345P3, HUF75345S3S
SABER Electrical Model
REV 3 February 1999
template huf75345 n2, n1, n3
electrical n2, n1, n3
{
var i iscl
d..model dbodymod = (is = 6e-12, xti = 5, cjo = 5.5e-9, tt = 5.9e-8, m=0.5, vj=0.75)
d..model dbreakmod = ()
d..model dplcapmod = (cjo = 6.75e-9, is = 1e-30, m = 0.88, vj = 1.45,fc=0.5)
m..model mmedmod = (type=_n, vto = 2.93, kp = 13.75, is = 1e-30, tox = 1)
m..model mstrongmod = (type=_n, vto = 3.23, kp = 96, is=1e-30,tox=1,
lambda = 0.06)
m..model mweakmod = (type=_n, vto = 2.35, kp = 0.02, is = 1e-30, tox = 1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -9, voff = -4)
sw_vcsp..model s1bmod = (ron = 1e-5, roff = 0.1, von = -4, voff = -9)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = 0, voff = 0.5)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.5, voff = 0)
c.ca n12 n8 = 5.55e-9
DPLCAP
10
RSLC2
5
RSLC1
51
ISCL
RDBREAK
72
LDRAIN
RLDRAIN
RDBODY
DRAIN
2
c.cb n15 n14 = 5.55e-9
c.cin n6 n8 = 3.45e-9
-
50
DBREAK
i.it n8 n17 = 1
9
20
d.dbody n7 n71 = model=dbodymod
d.dbreak n72 n11 = model=dbreakmod
d.dplcap n10 n5 = model=dplcapmod
LGATE
GATE
1
l.ldrain n2 n5 = 1e-9 RLGATE
l.lgate n1 n9 = 2.6e-9
l.lsource n3 n7 = 1.1e-9
k.k1 i(l.lgate) i(l.lsource) = l(l.lgate), l(l.lsource), 0.0085
ESG
+
EVTEMP
RGATE + 18 -
22
6
8
6
EVTHRES
+ 19 -
8
CIN
RDRAIN
16
21
MMED
MSTRO
8
11
MWEAK
EBREAK
+
17
18
-
7
71
DBODY
LSOURCE
SOURCE
3
RSOURCE
m.mmed n16 n6 n8 n8 = model=mmedmod, l = 1u, w = 1u
RLSOURCE
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l = 1u, w = 1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l = 1u, w = 1u
12
S1A
13
8
S2A
14
13
15
17
RBREAK
18
res.rbreak n17 n18 = 1, tc1 = 8e-4, tc2 = 4e-6
res.rdbody n71 n5 = 1.4e-3, tc1 = 2.75e-3, tc2 = 5e-6
res.rdbreak n72 n5 = 2.8e-2, tc1 = -4e-3, tc2 = 1e-6
res.rdrain n50 n16 = 1e-4, tc1 = 1.5e-1, tc2 = 6.5e-4
res.rgate n9 n20 = 0.36
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 26
res.rlsource n3 n7 = 11
CA
S1B
13
+
EGS
-
6
8
S2B
CB
+
EDS
-
5
8
14
8
IT
RVTEMP
19
-
VBAT
+
22
res.rslc1 n5 n51 = 1e-6, tc1 = 1e-4, tc2 = 1.05e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 3.15e-3, tc1 = 1e-3, tc2 = 0
res.rvtemp n18 n19 = 1, tc1 = -2.75e-3, tc2 = 1.45e-6
res.rvthres n22 n8 = 1, tc1 = -1.5e-3, tc2 = -2.6e-5
spe.ebreak n11 n7 n17 n18 = 56.7
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc = 1
equations {
i (n51->n50) + = iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/500))** 3.5))
}
}
?2009 Fairchild Semiconductor Corporation
RVTHRES
HUF75345G3, HUF75345P3, HUF75345S3S Rev. C0
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相关代理商/技术参数 |
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| HUF75345S3ST | 功能描述:MOSFET 75a 55V 0.007Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUF75345S3ST_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF75531SK8 | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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