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参数资料
| 型号： | HUF75345S3 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 7/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 75A D2PAK |
| 标准包装： | 400 |
| 系列： | UltraFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 75A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7 毫欧 @ 75A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 275nC @ 20V |
| 输入电容 (Ciss) @ Vds： | 4000pF @ 25V |
| 功率 - 最大： | 325W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 管件 |
HUF75345G3, HUF75345P3, HUF75345S3S
PSPICE Electrical Model
.SUBCKT HUF75345 2 1 3 ;
CA 12 8 5.55e-9
rev 3 Feb 99
CB 15 14 5.55e-9
CIN 6 8 3.45e-9
DPLCAP
5
LDRAIN
DRAIN
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
10
RSLC1
51
DBREAK
RLDRAIN
2
RSLC2
EBREAK 11 7 17 18 56.7
5
51
ESLC
11
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
LGATE
-
ESG
+
EVTEMP
6
8
EVTHRES
+ 19 -
8
50
RDRAIN
16
21
+
17
EBREAK 18
-
MWEAK
DBODY
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 2.6e-9
LSOURCE 3 7 1.1e-9
KGATE LSOURCE LGATE 0.0085
GATE
1
RLGATE
RGATE +
9 20
18 -
22
6
CIN
MSTRO
8
MMED
7
LSOURCE
SOURCE
3
RSOURCE
MMED 16 6 8 8 MMEDMOD
RLSOURCE
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
12
S1A
13
8
S2A
14
13
15
17
RBREAK
18
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 1e-4
S1B
S2B
RVTEMP
RGATE 9 20 0.36
RLDRAIN 2 5 10
RLGATE 1 9 26
RLSOURCE 3 7 11
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 3.15e-3
RVTHRES 22 8 RVTHRESMOD 1
CA
13
+
EGS
-
6
8
CB
+
EDS
-
5
8
14
8
IT
RVTHRES
19
-
VBAT
+
22
RVTEMP 18 19 RVTEMPMOD 1
S1A
S1B
S2A
S2B
6 12 13 8 S1AMOD
13 12 13 8 S1BMOD
6 15 14 13 S2AMOD
13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*500),3.5))}
.MODEL DBODYMOD D (IS = 6e-12 RS = 1.4e-3 IKF = 20 XTI = 5 TRS1 = 2.75e-3 TRS2 = 5.0e-6 CJO = 5.5e-9 TT = 5.9e-8 M = 0.5 VJ = 0.75)
.MODEL DBREAKMOD D (RS = 2.8e-2 IKF = 30 TRS1 = -4.0e-3 TRS2 = 1.0e-6)
.MODEL DPLCAPMOD D (CJO = 6.75e-9 IS = 1e-30 M = 0.88 VJ = 1.45 FC = 0.5)
.MODEL MMEDMOD NMOS (VTO = 2.93 KP = 13.75 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 0.36)
.MODEL MSTROMOD NMOS (VTO = 3.23 KP = 96 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u Lambda = 0.06)
.MODEL MWEAKMOD NMOS (VTO = 2.35 KP =0.02 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 3.6)
.MODEL RBREAKMOD RES (TC1 = 8.0e-4 TC2 = 4.0e-6)
.MODEL RDRAINMOD RES (TC1 = 1.5e-1 TC2 = 6.5e-4)
.MODEL RSLCMOD RES (TC1 = 1.0e-4 TC2 = 1.05e-6)
.MODEL RSOURCEMOD RES (TC1 = 1.0e-3 TC2 = 0)
.MODEL RVTHRESMOD RES (TC1 = -1.5e-3 TC2 = -2.6e-5)
.MODEL RVTEMPMOD RES (TC1 = -2.75e-3 TC2 = 1.45e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5
.MODEL S1BMOD VSWITCH (RON = 1e-5
.MODEL S2AMOD VSWITCH (RON = 1e-5
.MODEL S2BMOD VSWITCH (RON = 1e-5
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
VON = -9.00 VOFF= -4.00)
VON = -4.00 VOFF= -9.00)
VON = 0.00 VOFF= 0.50)
VON = 0.50 VOFF= 0.00)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options ; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
?2009 Fairchild Semiconductor Corporation
HUF75345G3, HUF75345P3, HUF75345S3S Rev. C0
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HUF75345S3S | 功能描述:MOSFET 75a 55V 0.007Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUF75345S3ST | 功能描述:MOSFET 75a 55V 0.007Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUF75345S3ST_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF75531SK8 | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUF75531SK8T | 功能描述:MOSFET 6a 80V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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