参数资料
型号: HY27UG084G2M-UPIP
厂商: HYNIX SEMICONDUCTOR INC
元件分类: PROM
英文描述: 512M X 8 FLASH 3.3V PROM, 30 ns, PBGA52
封装: 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, ULGA-52
文件页数: 10/53页
文件大小: 438K
代理商: HY27UG084G2M-UPIP
Rev 0.5 / Oct. 2005
18
Preliminary
HY27UG(08/16)4G(2/D)M Series
4Gbit (512Mx8bit / 256Mx16bit) NAND Flash
Symbol
Parameter
Value
Unit
3.3V
TA
Ambient Operating Temperature (Commercial Temperature Range)
0 to 70
Ambient Operating Temperature (Extended Temperature Range)
-25 to 85
Ambient Operating Temperature (Industrial Temperature Range)
-40 to 85
TBIAS
Temperature Under Bias
-50 to 125
TSTG
Storage Temperature
-65 to 150
VIO(2)
Input or Output Voltage
-0.6 to 4.6
V
Vcc
Supply Voltage
-0.6 to 4.6
V
Table 7: Absolute maximum ratings
NOTE:
1. Except for the rating “Operating Temperature Range”, stresses above those listed in the Table “Absolute
Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of
the device at these or any other conditions above those indicated in the Operating sections of this specification is
not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
2. Minimum Voltage may undershoot to -2V during transition and for less than 20ns during transitions.
Parameter
Symbol
Min
Typ
Max
Unit
Valid Block Number
NVB
4016
4096
Blocks
Table 6: Valid Blocks Number
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