参数资料
型号: HY27UG084GDM-TPIS
厂商: HYNIX SEMICONDUCTOR INC
元件分类: PROM
英文描述: 512M X 8 FLASH 3.3V PROM, 30 ns, PDSO48
封装: 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48
文件页数: 13/53页
文件大小: 438K
代理商: HY27UG084GDM-TPIS
Rev 0.5 / Oct. 2005
20
Preliminary
HY27UG(08/16)4G(2/D)M Series
4Gbit (512Mx8bit / 256Mx16bit) NAND Flash
Parameter
Symbol
Test Conditions
3.3Volt
Unit
Min
Typ
Max
Operating
Current
Sequential
Read
ICC1
tRC=50ns
CE#=VIL, IOUT=0mA
-25
45
mA
Program
ICC2
-
25
45
mA
Erase
ICC3
-
25
45
mA
Stand-by Current (TTL)
ICC4
CE#=VIH,
PRE=WP#=0V/Vcc
-1
mA
Stand-by Current (CMOS)
ICC5
CE#=Vcc-0.2,
PRE=WP#=0V/Vcc
-20
100
uA
Input Leakage Current
ILI
VIN=0 to Vcc (max)
-
±
20
uA
Output Leakage Current
ILO
VOUT =0 to Vcc (max)
-
±
20
uA
Input High Voltage
VIH
-
0.8xVcc
-
Vcc+0.3
V
Input Low Voltage
VIL
-
-0.3
-
0.2xVcc
V
Output High Voltage Level
VOH
IOH=-400uA
2.4
-
V
Output Low Voltage Level
VOL
IOL=2.1mA
-
0.4
V
Output Low Current (RB#)
IOL
(RB#)
VOL=0.4V
8
10
-
mA
Table 8: DC and Operating Characteristics
Parameter
Value
3.3Volt
Input Pulse Levels
0V to Vcc
Input Rise and Fall Times
5ns
Input and Output Timing Levels
Vcc/2
Output Load (2.7V - 3.3V)
1 TTL GATE and CL=50pF
Output Load (3.0V - 3.6V)
1 TTL GATE and CL=100pF
Table 9: AC Conditions
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