参数资料
型号: HY5PS1G421M-E3
厂商: HYNIX SEMICONDUCTOR INC
元件分类: DRAM
英文描述: 1Gb DDR2 SDRAM(DDP)
中文描述: 256M X 4 DDR DRAM, 0.6 ns, PBGA63
封装: FBGA-63
文件页数: 23/79页
文件大小: 1109K
代理商: HY5PS1G421M-E3
Rev. 0.2 / Oct. 2005
23
1
HY5PS12421(L)M
HY5PS12821(L)M
ODT timing mode switch at entering power down mode
T-5
T-4
T-3
T-2
T-1
T0
CK
CK
T1
CKE
ODT
Internal
Term Res.
tIS
tAOFD
RTT
tIS
RTT
T2
T3
T4
ODT
Internal
Term Res.
Active & Standby
mode timings to
be applied.
Power Down
mode timings to
be applied.
tAOFPDmax
tIS
ODT
Internal
Term Res.
tIS
tAOND
RTT
tIS
RTT
ODT
Internal
Term Res.
Active & Standby
mode timings to
be applied.
Power Down
mode timings to
be applied.
tAONPDmax
tANPD
Entering Slow Exit Active Power Down Mode
or Precharge Power Down Mode.
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