参数资料
型号: HY5PS1G821LM-E3
厂商: HYNIX SEMICONDUCTOR INC
元件分类: DRAM
英文描述: 1Gb DDR2 SDRAM(DDP)
中文描述: 128M X 8 DDR DRAM, 0.6 ns, PBGA63
封装: FBGA-63
文件页数: 66/79页
文件大小: 1109K
代理商: HY5PS1G821LM-E3
Rev. 0.2 / Oct. 2005
66
1
HY5PS12421(L)M
HY5PS12821(L)M
5.4.2 Full Strength Default Pullup Driver Characteristics
DDR2 Default Pullup Characteristics for Full Strength Output Driver
Pullup Current (mA)
Voltage (V)
Minimum (23.4 Ohms)Low (18 ohms)
Nominal Default
High (18 ohms)
Maximum (12.6 Ohms)
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
-8.5
-12.1
-14.7
-16.4
-17.8
-18.6
-19.0
-19.3
-19.7
-19.9
-20.0
-20.1
-20.2
-20.3
-20.4
-20.6
-11.1
-16.0
-20.3
-24.0
-27.2
-29.8
-31.9
-33.4
-34.6
-35.5
-36.2
-36.8
-37.2
-37.7
-38.0
-38.4
-38.6
-11.8
-17.0
-22.2
-27.5
-32.4
-36.9
-40.8
-44.5
-47.7
-50.4
-52.5
-54.2
-55.9
-57.1
-58.4
-59.6
-60.8
-15.9
-23.8
-31.8
-39.7
-47.7
-55.0
-62.3
-69.4
-75.3
-80.5
-84.6
-87.7
-90.8
-92.9
-94.9
-97.0
-99.1
-101.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
VDDQ to VOUT (V)
-120
-100
-80
-60
-40
-20
0
P
Minimum
Nominal
Default
Low
Nominal
Default
High
Maximum
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