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参数资料
| 型号： | HY62EF16200ASLM-10 |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | SRAM |
| 英文描述： | 128K X 16 STANDARD SRAM, 100 ns, PBGA48 |
| 封装： | MICRO, CSP, BGA-48 |
| 文件页数： | 1/13页 |
| 文件大小： | 204K |
| 代理商： | HY62EF16200ASLM-10 |
This document is a general product description and is subject to change without notice. Hyundai Electronics does not
assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.01 /Feb. 99
Hyundai Semiconductor
HY62UF16200A/ HY62QF16200A/ HY62EF16200A/
HY62SF16200A Series 128Kx16bit full CMOS SRAM
PRELIMINARY
DESCRIPTION
The
HY62UF16200A
/
HY62QF16200A
/
HY62EF16200A / HY62SF16200A is a high
speed, super low power and 2Mbit full CMOS
SRAM organized as 131,072 words by 16bits. The
HY62UF16200A
/
HY62QF16200A
/
HY62EF16200A / HY62SF16200A uses high
performance full CMOS process technology and
is designed for high speed and low power circuit
technology. It is particularly well-suited for the
high density low power system application. This
device has a data retention mode that guarantees
data to remain valid at a minimum power supply
voltage of 1.5V.
FEATURES
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Battery backup(LL/SL-part)
- 1.5V(min) data retention
Standard pin configuration
- 48ball CSP
Product
Voltage
Speed
Operation
Standby Current(uA)
Temperature
No.
(V)
(ns)
Current(mA)
LL
SL
(
°C)
HY62UF16200A
3.0
55/70/85
15
10
2
0~70(Normal)
HY62UF16200A-I
3.0
55/70/85
15
10
2
-40~85(E.T.)
HY62QF16200A
2.5
70/85/100
10
2
0~70(Normal)
HY62QF16200A-I
2.5
70/85/100
10
2
-40~85(E.T.)
HY62EF16200A
2.0
85/100/120
10
2
0~70(Normal)
HY62EF16200A-I
2.0
85/100/120
10
2
-40~85(E.T.)
HY62SF16200A
1.8
100/120/150
10
2
0~70(Normal)
HY62SF16200A-I
1.8
100/120/150
10
2
-40~85(E.T.)
Note 1. E.T. : Extended Temperature, Normal : Normal Temperature
2. Current value is max.
PIN CONNECTION ( Top View )
BLOCK DIAGRAM
/LB
IO9
IO10
/OE A0
A1
A2
NC
/UB A3
A4
/CS IO1
IO11 A5
A6
IO2
IO3
Vss IO12 NC
A7
IO4
Vcc
Vcc IO13 NC
A16 IO5
Vss
IO15 IO14 A14 A15 IO6
IO7
IO16 NC
A12 A13 /WE IO8
NC
A8
A9
A10 A11 NC
ROW
DECODER
MEMORY ARRAY
1024x128x16
SENSE
AMP
WRITE
DRIVER
OUTPUT
BUFFER
I/O1
I/O8
I/O9
I/O16
DECODER
ADD
INPUT
BUFFER
A0
A16
/CS
/OE
/LB
/UB
/WE
PIN DESCRIPTION
Pin Name
Pin Funtion
Pin Name
Pin Funtion
/CS
Chip Select
I/O1~I/O16
Data Input/Output
/WE
Write Enable
A0~A16
Address Input
/OE
Output Enable
Vcc
Power(3.0V/2.5V/2.0V/1.8V)
/LB
Lower Byte Control(I/O1~I/O8)
Vss
Ground
/UB
Upper Byte Control(I/O9~I/O16)
NC
No Connection
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相关代理商/技术参数 |
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| HY62KF08401C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8|2.7~3.6V|55/70|Super Low Power Slow SRAM - 4M |
| HY62KF08401C-DI | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:512Kx8bit full CMOS SRAM |
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| HY62KF08401C-I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:512Kx8bit full CMOS SRAM |
| HY62KF08401C-SI | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:512Kx8bit full CMOS SRAM |
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