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参数资料
| 型号： | HY62EF16200ASLM-10 |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | SRAM |
| 英文描述： | 128K X 16 STANDARD SRAM, 100 ns, PBGA48 |
| 封装： | MICRO, CSP, BGA-48 |
| 文件页数： | 12/13页 |
| 文件大小： | 204K |
| 代理商： | HY62EF16200ASLM-10 |
HY62UF16200A/HY62QF16200A/HY62EF16200A/HY62SF16200A Series
Rev.01 / Feb. 99
8
Vcc = 1.8V
±10%, TA = 0°C to 70°C (Normal)/ -40°C to 85°C (E.T.), unless otherwise specified
-10
-12
-15
Min.
Max.
Min.
Max.
Min
Max.
1
tRC
Read Cycle Time
100
-
120
-
150
-
ns
2
tAA
Address Access Time
-
100
-
120
-
150
ns
3
tACS
Chip Select Access Time
-
100
-
120
-
150
ns
4
tOE
Output Enable to Output Valid
-
50
-
60
-
75
ns
5
tBA
/LB, /UB Access Time
-
50
-
60
-
75
ns
6
tCLZ
Chip Select to Output in Low Z
20
-
20
-
20
-
ns
7
tOLZ
Output Enable to Output in Low Z
5
-
10
-
10
-
ns
8
tBLZ
/LB, /UB Enable to Output in Low Z
5
-
10
-
10
-
ns
9
tCHZ
Chip Deselection to Output in High Z
0
30
0
40
0
50
ns
10
tOHZ
Out Disable to Output in High Z
0
30
0
40
0
50
ns
11
tBHZ
/LB, /UB Disable to Output in High Z
0
30
0
40
0
50
ns
12
tOH
Output Hold from Address Change
15
-
15
-
15
-
ns
13
tWC
Write Cycle Time
100
-
120
-
150
-
ns
14
tCW
Chip Selection to End of Write
80
-
100
-
120
-
ns
15
tAW
Address Valid to End of Write
80
-
100
-
120
-
ns
16
tBW
/LB, /UB Valid to End of Write
80
-
100
-
120
-
ns
17
tAS
Address Set-up Time
0
-
0
-
0
-
ns
18
tWP
Write Pulse Width
75
-
85
-
100
-
ns
19
tWR
Write Recovery Time
0
-
0
-
0
-
ns
20
tWHZ
Write to Output in High Z
0
35
0
40
0
50
ns
21
tDW
Data to Write Time Overlap
45
-
50
-
60
-
ns
22
tDH
Data Hold from Write Time
0
-
0
-
0
-
ns
23
tOW
Output Active from End of Write
10
-
10
-
10
-
ns
AC TEST CONDITIONS
TA = 0
°C to 70°C (Normal) / -40°C to 85°C (E.T.), unless otherwise specified
PARAMETER
Value
Input Pulse Level
HY62UF16200A-(I)
0.4V to 2.2V
HY62QF16200A-(I)
0.4V to 2.2V
HY62EF16200A-(I)
0.4V to 1.8V
HY62SF16200A-(I)
0.4V to 1.6V
Input Rise and Fall Time
5ns
Input and Output
HY62UF16200A-(I)
1.5V
Timing Reference
HY62QF16200A-(I)
1.1V
Level
HY62EF16200A-(I)
0.9V
HY62SF16200A-(I)
0.8V
Output Load
CL = 30pF + 1TTL Load
Symbol
Parameter
#
READ CYCLE
WRITE CYCLE
Unit
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| HY62KF08401C-I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:512Kx8bit full CMOS SRAM |
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