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参数资料
| 型号： | HY62EF16200ASLM-10 |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | SRAM |
| 英文描述： | 128K X 16 STANDARD SRAM, 100 ns, PBGA48 |
| 封装： | MICRO, CSP, BGA-48 |
| 文件页数： | 7/13页 |
| 文件大小： | 204K |
| 代理商： | HY62EF16200ASLM-10 |
HY62UF16200A/HY62QF16200A/HY62EF16200A/HY62SF16200A Series
Rev.01 / Feb. 99
3
RECOMMENDED DC OPERATING CONDITION
Symbol
Parameter
Product
Min.
Typ.
Max.
Unit
Vcc
Supply Voltage
HY62UF16200A-(I)
2.7
3.0
3.3
V
HY62QF16200A-(I)
2.2
2.5
2.8
V
HY62EF16200A-(I)
1.8
2.0
2.2
V
HY62SF16200A-(I)
1.6
1.8
2.0
Vss
Ground
HY62UF16200A-(I)
0
V
HY62QF16200A-(I)
HY62EF16200A-(I)
HY62SF16200A-(I)
VIH
Input High Voltage
HY62UF16200A-(I)
2.2
-
Vcc+0.2
V
HY62QF16200A-(I)
2.0
-
Vcc+0.2
V
HY62EF16200A-(I)
1.6
-
Vcc+0.2
V
HY62SF16200A-(I)
1.4
Vcc+0.2
V
VIL
Input Low Voltage
HY62UF16200A-(I)
-0.2(1)
-
0.4
V
HY62QF16200A-(I)
HY62EF16200A-(I)
HY62SF16200A-(I)
Note : 1. VIL = -1.5V for pulse width less than 30ns
TRUTH TABLE
I/O Pin
I/O1~I/O8
I/O9~I/O16
H
X
Not Selected
Hi-Z
ISB, ISB1
L
H
X
Output Disabled
Hi-Z
Icc
L
X
H
Hi-Z
L
H
L
H
Read
DOUT
Hi-Z
H
L
Hi-Z
DOUT
Icc1
L
DOUT
L
X
L
H
Write
DIN
Hi-Z
H
L
Hi-Z
DIN
Icc1
L
DIN
Note:
1. H=VIH, L=VIL, X=don't care
2. UB, LB(Upper, Lower Byte enable)
These active LOW inputs allow individual bytes to be written or read.
When LB is LOW, data is written or read to the lower byte, I/O 1 -I/O 8.
When UB is LOW, data is written or read to the upper byte, I/O 9 -I/O 16.
/CS
/WE
/OE
/LB
/UB
Mode
Supply Current
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相关代理商/技术参数 |
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| HY62KF08401C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8|2.7~3.6V|55/70|Super Low Power Slow SRAM - 4M |
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| HY62KF08401C-I | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:512Kx8bit full CMOS SRAM |
| HY62KF08401C-SI | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:512Kx8bit full CMOS SRAM |
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