参数资料
型号: HY62EF16200ASLM-10
厂商: HYNIX SEMICONDUCTOR INC
元件分类: SRAM
英文描述: 128K X 16 STANDARD SRAM, 100 ns, PBGA48
封装: MICRO, CSP, BGA-48
文件页数: 4/13页
文件大小: 204K
代理商: HY62EF16200ASLM-10
HY62UF16200A/HY62QF16200A/HY62EF16200A/HY62SF16200A Series
Rev.01 / Feb. 99
12
DATA RETENTION ELECTRIC CHARACTERISTIC
TA=0
°C to 70°C (Normal)/-40°C to 85°C (E.T.)
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
VDR
Vcc for Data Retention
/CS > Vcc - 0.2V
1.5
-
3.3
V
ICCDR
Data Retention Current
Vcc=2.0V, /CS > Vcc - 0.2V,
LL
-
10
uA
Vss < VIN < Vcc
SL
-
2
uA
TCDR
Chip Deselect to Data
Retention Time
See Data Retention Timing Diagram
0
-
ns
TR
Operating Recovery Time
tRC(2)
-
ns
Notes:
1. Typical values are under the condition of TA = 25
°C.
2. tRC is read cycle time.
DATA RETENTION TIMING DIAGRAM
CS
VDR
CS>VCC-0.2V
tCDR
tR
VSS
VCC
2.7/2.2V
1.8/1.6V
VIH
DATA RETENTION MODE
Note :
1. 2.7V : HY62UF16200A and HY62UF16200A-I
2.2V : HY62QF16200A and HY62QF16200A-I
1.8V : HY62EF16200A and HY62EF16200A-I
1.6V : HY62SF16200A and HY62SF16200A-I
RELIABILITY SPEC.
TEST
MODE
TEST SPEC.
ESD
HBM
> 2000V
MM
> 250V
LATCH - UP
< -100mA
> 100mA
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