参数资料
型号: HYS72T64000EP-3.7-B2
厂商: QIMONDA AG
元件分类: DRAM
英文描述: 64M X 72 DDR DRAM MODULE, DMA240
封装: GREEN, RDIMM-240
文件页数: 15/64页
文件大小: 3411K
代理商: HYS72T64000EP-3.7-B2
HYS72T[64/128/256]xx0EP–[2.5/25F/3/3S/3.7]–B2
Registered DDR2 SDRAM Modules
Internet Data Sheet
Rev. 1.02, 2008-06
22
07312007-HYD2-P177
TABLE 15
DRAM Component Timing Parameter by Speed Grade - DDR2–533
Parameter
Symbol
DDR2–533
Unit
Notes
Min.
Max.
CAS A to CAS B command period
t
CCD
2—
t
CK
CK, CK high-level width
t
CH
0.45
0.55
t
CK
CKE minimum high and low pulse width
t
CKE
3—
t
CK
CK, CK low-level width
t
CL
0.45
0.55
t
CK
Auto-Precharge write recovery +
precharge time
t
DAL
WR +
t
RP
t
CK
Minimum time clocks remain ON after
CKE asynchronously drops LOW
t
DELAY
t
IS + tCK + tIH
––
ns
DQ and DM input hold time (differential
data strobe)
t
DH.BASE
225
––
ps
DQ and DM input hold time (single ended
data strobe)
t
DH1.BASE
–25
ps
DQ and DM input pulse width (each
input)
t
DIPW
0.35
t
CK
DQS input HIGH pulse width (write cycle)
t
DQSH
0.35
t
CK
DQS input LOW pulse width (write cycle)
t
DQSL
0.35
t
CK
DQS-DQ skew (for DQS & associated
DQ signals)
t
DQSQ
300
ps
Write command to 1st DQS latching
transition
t
DQSS
– 0.25
+ 0.25
t
CK
DQ and DM input setup time (differential
data strobe)
t
DS.BASE
100
ps
DQ and DM input setup time (single
ended data strobe)
t
DS1.BASE
–25
ps
DQS falling edge hold time from CK
(write cycle)
t
DSH
0.2
t
CK
DQS falling edge to CK setup time (write
cycle)
t
DSS
0.2
t
CK
Clock half period
t
HP
MIN. (
t
CL, tCH)
Data-out high-impedance time from CK /
CK
t
HZ
t
AC.MAX
ps
Address and control input hold time
t
IH.BASE
375
ps
Address and control input pulse width
(each input)
t
IPW
0.6
t
CK
Address and control input setup time
t
IS.BASE
250
ps
DQ low-impedance time from CK / CK
t
LZ(DQ)
2
× t
AC.MIN
t
AC.MAX
ps
DQS low-impedance from CK / CK
t
LZ(DQS)
t
AC.MIN
t
AC.MAX
ps
MRS command to ODT update delay
t
MOD
012
ns
Mode register set command cycle time
t
MRD
2—
t
CK
OCD drive mode output delay
t
OIT
012
ns
相关PDF资料
PDF描述
HZ20-1 19.25 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
HZ6B1L 5.65 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
HZ9.1CP 9.65 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
HZB6.8MWA 6.8 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
HZF24BPTR 0.9 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
相关代理商/技术参数
参数描述
HYS72T64000EU-2.5-B2 制造商:QIMONDA 制造商全称:QIMONDA 功能描述:240-Pin unbuffered DDR2 SDRAM Modules
HYS72T64000EU-25F-B2 制造商:QIMONDA 制造商全称:QIMONDA 功能描述:240-Pin unbuffered DDR2 SDRAM Modules
HYS72T64000EU-3.7-B2 制造商:QIMONDA 制造商全称:QIMONDA 功能描述:240-Pin unbuffered DDR2 SDRAM Modules
HYS72T64000EU-3-B2 制造商:QIMONDA 制造商全称:QIMONDA 功能描述:240-Pin unbuffered DDR2 SDRAM Modules
HYS72T64000EU-3S-B2 制造商:QIMONDA 制造商全称:QIMONDA 功能描述:240-Pin unbuffered DDR2 SDRAM Modules