参数资料
型号: IDT709149S10PFI
厂商: IDT, Integrated Device Technology Inc
文件页数: 2/10页
文件大小: 0K
描述: IC SRAM 36KBIT 10NS 80TQFP
标准包装: 6
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,同步
存储容量: 36K(4K x 9)
速度: 10ns
接口: 并联
电源电压: 4.5 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 80-LQFP
供应商设备封装: 80-TQFP(14x14)
包装: 托盘
其它名称: 709149S10PFI
IDT709149S
High-Speed 36K (4K x 9-bit) Synchronous Pipelined Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Description
The IDT709149 is a high-speed 4K x 9 bit synchronous Dual-Port
SRAM. The memory array is based on Dual-Port memory cells to allow
simultaneous access from both ports. Registers on control, data, and
address inputs provide low set-up and hold times. The timing latitude
provided by this approach will allow systems to be designed with very short
cycle times. This device has been optimized for applications having
unidirectional data flow or bi-directional data flow in bursts, by utilizing input
data registers.
The IDT709149 utilizes a 9-bit wide data path to allow for parity at the
user's option. This feature is especially useful in data communication
applications where it is necessary to use a parity bit for transmission/
reception error checking.
Fabricated using IDT’s CMOS high-performance technology, these
Dual-Ports typically operate on only 800mW of power at maximum high-
speed clock-to-data output times as fast as 8ns. An automatic power down
feature, controlled by CE , permits the on-chip circuitry of each port to enter
a very low standby power mode.
The IDT709149 is packaged in an 80-pin TQFP.
Pin Configurations (1,2,3)
11/16/01
Reference
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61
N/C
A 6L
A 7L
A 8L
A 9L
A 10L
1
2
3
4
5
6
60
59
58
57
56
55
N/C
A 7R
A 8R
A 9R
A 10R
A 11R
A 11L
N/C
OE L
V CC
V CC
R/ W L
N/C
N/C
CE L
GND
I/O 8L
I/O 7L
I/O 6L
N/C
7
8
9
10
11
12
13
14
15
16
17
18
19
20
IDT709149PF
PN80-1 (4)
80-Pin TQFP
Top View (5)
21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
54
53
52
51
50
49
48
47
46
45
44
43
42
41
N/C
OE R
FT /PIPED R
GND
GND
R/ W R
N/C
N/C
CE R
GND
I/O 8R
I/O 7R
I/O 6R
N/C
,
3494 drw 02
NOTES:
1. All V CC pins must be connected to power supply.
2. All ground pins must be connected to ground supply.
3. Package body is approximately 14mm x 14mm x 1.4mm.
4, This package code is used to reference the package diagram.
5. This text does not indicate the orientaion of the actual part-marking.
6.42
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IDT709149S10PFI8 功能描述:IC SRAM 36KBIT 10NS 80TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT709149S12PF 功能描述:IC SRAM 36KBIT 12NS 80TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT709149S12PF8 功能描述:IC SRAM 36KBIT 12NS 80TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,异步 存储容量:128K(8K x 16) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:70V25S15PF
IDT709149S8PF 功能描述:IC SRAM 36KBIT 8NS 80TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT709149S8PF8 功能描述:IC SRAM 36KBIT 8NS 80TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8