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参数资料
| 型号： | IDT70T3539MS133BC8 |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 10/26页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 18MBIT 133MHZ 256BGA |
| 标准包装： | 1,000 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，同步 |
| 存储容量： | 18M（512K x 36） |
| 速度： | 133MHz |
| 接口： | 并联 |
| 电源电压： | 2.4 V ~ 2.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 256-LBGA |
| 供应商设备封装： | 256-CABGA（17x17） |
| 包装： | 带卷 (TR) |
| 其它名称： | 70T3539MS133BC8 |
IDT70T3539M
High-Speed 2.5V 512K x 36 Dual-Port Synchronous Static RAM
Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the Operating Temperature Range
(Read and Write Cycle Timing) (2,3) (V DD = 2.5V ± 100mV, T A = 0°C to +70°C)
70T3539MS166
Com'l Only
70T3539MS133
Com'l
& Ind
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
t CYC1
Clock Cycle Time (Flow-Through)
(1)
20
____
25
____
ns
t CYC2
t CH1
Clock Cycle Time (Pipelined) (1)
Clock High Time (Flow-Through) (1)
6
8
____
____
7.5
10
____
____
ns
ns
t CL1
Clock Low Time (Flow-Through)
(1)
8
____
10
____
ns
t OHZ
t CH2
t CL2
t SA
t HA
t SC
t HC
t SB
t HB
t SW
t HW
t SD
t HD
t SAD
t HAD
t SCN
t HCN
t SRPT
t HRPT
t OE
t OLZ (6)
(6)
t CD1
t CD2
t DC
t CKHZ (6)
t CKLZ (6)
t INS
t INR
t COLS
t COLR
t ZZSC
t ZZRC
Clock High Time (Pipelined) (2)
Clock Low Time (Pipelined) (1)
Address Setup Time
Address Hold Time
Chip Enable Setup Time
Chip Enable Hold Time
Byte Enable Setup Time
Byte Enable Hold Time
R/W Setup Time
R/W Hold Time
Input Data Setup Time
Input Data Hold Time
ADS Setup Time
ADS Hold Time
CNTEN Setup Time
CNTEN Hold Time
REPEAT Setup Time
REPEAT Hold Time
Output Enable to Data Valid
Output Enable to Output Low-Z
Output Enable to Output High-Z
Clock to Data Valid (Flow-Through) (1)
Clock to Data Valid (Pipelined) (1)
Data Output Hold After Clock High
Clock High to Output High-Z
Clock High to Output Low-Z
Interrupt Flag Set Time
Interrupt Flag Reset Time
Collision Flag Set Time
Collision Flag Reset Time
Sleep Mode Set Cycles
Sleep Mode Recovery Cycles
2.4
2.4
1.7
0.5
1.7
0.5
1.7
0.5
1.7
0.5
1.7
0.5
1.7
0.5
1.7
0.5
1.7
0.5
____
1
1
____
____
1
1
1
____
____
____
____
2
3
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
4.4
____
3.6
12
3.6
____
3.6
____
7
7
3.6
3.6
____
____
3
3
1.8
0.5
1.8
0.5
1.8
0.5
1.8
0.5
1.8
0.5
1.8
0.5
1.8
0.5
1.8
0.5
____
1
1
____
____
1
1
1
____
____
____
____
2
3
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
4.6
____
4.2
15
4.2
____
4.2
____
7
7
4.2
4.2
____
____
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
cycles
cycles
Port-to-Port Delay
t CO
Clock-to-Clock Offset
5
____
6
____
ns
t OFS
NOTES:
Clock-to-Clock Offset for Collision Detection
Please refer to Collision Detection Timing Table on Page 19
5678 tbl 11
1. The Pipelined output parameters (t CYC2 , t CD2 ) apply to either or both left and right ports when FT /PIPE X = V DD (2.5V). Flow-through parameters (t CYC1 , t CD1 )
apply when FT /PIPE = V ss (0V) for that port.
2. All input signals are synchronous with respect to the clock except for the asynchronous Output Enable ( OE ), FT /PIPE and OPT. FT /PIPE and OPT should be
treated as DC signals, i.e. steady state during operation.
3. These values are valid for either level of V DDQ (3.3V/2.5V). See page 6 for details on selecting the desired operating voltage levels for each port.
4. Guaranteed by design (not production tested).
10
6.42
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT70T3539MS133BCG | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 18MBIT 133MHZ 256CABGA |
| IDT70T3539MS133BCGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 18MBIT 133MHZ 256CABGA |
| IDT70T3539MS133BCI | 功能描述:IC SRAM 18MBIT 133MHZ 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,500 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（单线） 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 供应商设备封装:8-MSOP 包装:带卷 (TR) |
| IDT70T3539MS133BCI8 | 功能描述:IC SRAM 18MBIT 133MHZ 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70T3539MS166BC | 功能描述:IC SRAM 18MBIT 166MHZ 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
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