参数资料
型号: IDT70V07L35G
厂商: IDT, Integrated Device Technology Inc
文件页数: 6/19页
文件大小: 0K
描述: IC SRAM 256KBIT 35NS 68PGA
标准包装: 3
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 256K (32K x 8)
速度: 35ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: 0°C ~ 70°C
封装/外壳: 68-BPGA
供应商设备封装: 68-PGA(29.46x29.46)
包装: 托盘
其它名称: 70V07L35G
IDT70V07S/L
High-Speed 32K x 8 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (V CC = 3.3V ± 0.3V)
70V07S
70V07L
Input Leakage Current
Symbol
|I LI |
|I LO |
V OL
V OH
Parameter
(1)
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Conditions
V CC = 3.6V, V IN = 0V to V CC
CE = V IH , V OUT = 0V to V CC
I OL = +4mA
I OH = -4mA
Min.
___
___
___
2.4
Max.
10
10
0.4
___
Min.
___
___
___
2.4
Max.
5
5
0.4
___
Unit
μA
μA
V
V
NOTE:
1. At V CC < 2.0V, input leakages are undefined.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (1) (V CC = 3.3V ± 0.3V)
2943 tbl 08
70V07X25
Com'l
& Ind
70V07X35
Com'l
& Ind
70V07X55
Com'l Only
Symbol
Parameter
Test Condition
Version
Typ. (2)
Max.
Typ. (2)
Max.
Typ. (2)
Max.
Unit
I CC
I SB1
I SB2
I SB3
I SB4
Dynamic Operating
Current
(Both Ports Active)
Standby Current
(Both Ports - TTL
Level Inputs)
Standby Current
(One Port - TTL
Level Inputs)
Full Standby Current
(Both Ports -
CMOS Level Inputs)
Full Standby Current
(One Port -
CMOS Level Inputs)
CE = V IL , Outputs Disabled
SEM = V IL
f = f MAX (3)
CE R = CE L = V IH
SEM R = SEM L = V IH
f = f MAX (3)
CE "A" = V IL and CE "B" = V IH (5)
Active Port Outputs Disabled,
f=f MAX (3)
SEM R = SEM L = V IH
Both Ports CE L and
CE R > V CC - 0.2V,
V IN > V CC - 0.2V or
V IN < 0.2V, f = 0 (4)
SEM R = SEM L > V CC - 0.2V
CE "A" < 0.2V and
CE "B" > V CC - 0.2V (5)
SEM R = SEM L > V CC - 0.2V
V IN > V CC - 0.2V or V IN < 0.2V
Active Port Outputs Disabled,
f = f MAX (3)
COM'L
IND
COM'L
IND
COM'L
IND
COM'L
IND
COM'L
IND
S
L
S
L
S
L
S
L
S
L
S
L
S
L
S
L
S
L
S
L
100
100
____
100
14
12
____
12
50
50
____
50
1.0
0.2
____
0.2
60
60
____
60
170
140
____
185
30
24
____
50
95
85
____
105
6
3
____
3
90
80
____
90
90
90
____
90
12
10
____
10
45
45
____
45
1.0
0.2
____
0.2
55
55
____
55
140
120
____
155
30
24
____
50
87
75
____
95
6
3
____
3
85
74
____
85
90
90
____
____
12
10
____
____
45
45
____
____
1.0
0.2
____
____
55
55
____
____
140
120
____
____
30
24
____
____
87
75
____
____
6
3
____
____
85
74
____
____
mA
mA
mA
mA
mA
NOTES:
2943 tbl 09
1. 'X' in part number indicates power rating (S or L).
2. V CC = 3.3V, T A = +25°C, and are not production tested. I CCDC = 80mA (Typ.)
3. At f = f MAX , address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/ t RC, and using “AC Test Conditions" of input levels
of GND to 3V.
4. f = 0 means no address or control lines change.
5. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
6
相关PDF资料
PDF描述
IDT70V08S15PF IC SRAM 512KBIT 15NS 100TQFP
IDT70V09L20PFI IC SRAM 1MBIT 20NS 100TQFP
IDT70V18L20PFI IC SRAM 576KBIT 20NS 100TQFP
IDT70V25L55G IC SRAM 128KBIT 55NS 84PGA
IDT70V261L25PFGI IC SRAM 256KBIT 25NS 100TQFP
相关代理商/技术参数
参数描述
IDT70V07L35J 功能描述:IC SRAM 256KBIT 35NS 68PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V07L35J8 功能描述:IC SRAM 256KBIT 35NS 68PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V07L35PF 功能描述:IC SRAM 256KBIT 35NS 80TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V07L35PF8 功能描述:IC SRAM 256KBIT 35NS 80TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,异步 存储容量:128K(8K x 16) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:70V25S15PF
IDT70V07L35PFGI 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 256KBIT 35NS 80TQFP