参数资料
型号: IDT70V37L20PFI
厂商: IDT, Integrated Device Technology Inc
文件页数: 2/17页
文件大小: 0K
描述: IC SRAM 576KBIT 20NS 100TQFP
标准包装: 6
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 576K(32K x 18)
速度: 20ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 100-LQFP
供应商设备封装: 100-TQFP(14x14)
包装: 托盘
其它名称: 70V37L20PFI
IDT70V37L
High-Speed 3.3V 32K x 18 Dual-Port Static RAM
Description
The IDT70V37 is a high-speed 32K x 18 Dual-Port Static RAM. The
IDT70V37 is designed to be used as a stand-alone 576K-bit
Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for
36-bit-or-more word system. Using the IDT MASTER/SLAVE
Dual-Port RAM approach in 36-bit or wider memory system applications
results in full-speed, error-free operation without the need for additional
discrete logic.
This device provides two independent ports with separate control,
address, and I/O pins that permit independent, asynchronous access for
Pin Configurations (1,2,3)
06/24/04
INDEX
Industrial and Commercial Temperature Ranges
reads or writes to any location in memory. An automatic power down
feature controlled by the chip enables (either CE 0 or CE 1 )
permit the on-chip circuitry of each port to enter a very low standby power
mode.
Fabricated using IDT’s CMOS high-performance technology,
these devices typically operate on only 440mW of power.
The IDT70V37 is packaged in a 100-pin Thin Quad Flatpack (TQFP).
75
A 9L
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76
1
A 8R
A 10L
A 11L
A 12L
A 13L
A 14L
NC
LB L
2
3
4
5
6
7
8
74
73
72
71
70
69
68
A 9R
A 10R
A 11R
A 12R
A 13R
A 14R
NC
UB L
CE 0L
CE 1L
SEM L
R/ W L
OE L
V DD
V SS
I/O 17L
I/O 16L
V SS
I/O 15L
I/O 14L
I/O 13L
I/O 12L
I/O 11L
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
IDT70V37PF
PN100-1 (4)
100-Pin TQFP
Top View (5)
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
LB R
UB R
CE 0R
CE 1R
SEM R
R/ W R
V SS
OE R
V SS
I/O 17R
V SS
I/O 16R
I/O 15R
I/O 14R
I/O 13R
I/O 12R
I/O 10L
25 51
26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
I/O 11R
4851 drw 02a
NOTES:
1. All V DD pins must be connected to power supply.
2. All V SS pins must be connected to ground.
3. Package body is approximately 14mm x 14mm x 1.4mm.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.
6.42
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IDT70V37L20PFI8 功能描述:IC SRAM 576KBIT 20NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V38L15PF 功能描述:IC SRAM 1.125MBIT 15NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70V38L15PF8 功能描述:IC SRAM 1.125MBIT 15NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V38L15PFG 功能描述:IC SRAM 1.125MBIT 15NS 100TQFP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70V38L15PFG8 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 1.125MBIT 15NS 100TQFP