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参数资料
| 型号： | IDT70V38L15PFG |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 14/17页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 1.125MBIT 15NS 100TQFP |
| 标准包装： | 12 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 1.125M（64K x 18） |
| 速度： | 15ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 100-LQFP |
| 供应商设备封装： | 100-TQFP（14x14） |
| 包装： | 托盘 |
IDT70V38L
High-Speed 3.3V 64K x 18 Dual-Port Static RAM
Truth Table V —
Address BUSY Arbitration (4)
Industrial and Commercial Temperature Ranges
Inputs
Outputs
CE L
X
H
X
L
CE R
X
X
H
L
A OL -A 15L
A OR -A 15R
NO MATCH
MATCH
MATCH
MATCH
BUSY L (1)
H
H
H
(2)
BUSY R (1)
H
H
H
(2)
Function
Normal
Normal
Normal
Write Inhibit (3)
NOTES:
4850 tbl 17
1. Pins BUSY L and BUSY R are both outputs when the part is configured as a master. Both are inputs when configured as a slave. BUSY outputs on the IDT70V38 are push-
pull, not open drain outputs. On slaves the BUSY input internally inhibits writes.
2. "L" if the inputs to the opposite port were stable prior to the address and enable inputs of this port. "H" if the inputs to the opposite port became stable after the address and
enable inputs of this port. If t APS is not met, either BUSY L or BUSY R = LOW will result. BUSY L and BUSY R outputs can not be LOW simultaneously.
3. Writes to the left port are internally ignored when BUSY L outputs are driving LOW regardless of actual logic level on the pin. Writes to the right port are internally ignored when
BUSY R outputs are driving LOW regardless of actual logic level on the pin.
4. Refer to Truth Table I - Chip Enable.
Truth Table VI — Example of Semaphore Procurement Sequence (1,2,3)
Functions
No Action
Left Port Writes "0" to Semaphore
Right Port Writes "0" to Semaphore
Left Port Writes "1" to Semaphore
Left Port Writes "0" to Semaphore
Right Port Writes "1" to Semaphore
Left Port Writes "1" to Semaphore
Right Port Writes "0" to Semaphore
Right Port Writes "1" to Semaphore
Left Port Writes "0" to Semaphore
Left Port Writes "1" to Semaphore
D 0 - D 17 Left
1
0
0
1
1
0
1
1
1
0
1
D 0 - D 17 Right
1
1
1
0
0
1
1
0
1
1
1
Status
Semaphore free
Left port has semaphore token
No change. Right side has no write access to semaphore
Right port obtains semaphore token
No change. Left port has no write access to semaphore
Left port obtains semaphore token
Semaphore free
Right port has semaphore token
Semaphore free
Left port has semaphore token
Semaphore free
4850 tbl 18
NOTES:
1. This table denotes a sequence of events for only one of the eight semaphores on the IDT70V38.
2. There are eight semaphore flags written to via I/O 0 and read from all I/O's (I/O 0 -I/O 17 ). These eight semaphores are addressed by A 0 - A 2 .
3. CE = V IH , SEM = V IL to access the semaphores. Refer to Truth Table III - Semaphore Read/Write Control.
Functional Description
The IDT70V38 provides two ports with separate control, address
and I/O pins that permit independent access for reads or writes to any
location in memory. The IDT70V38 has an automatic power down
feature controlled by CE . The CE 0 and CE 1 control the on-chip power
down circuitry that permits the respective port to go into a standby
mode when not selected ( CE = HIGH). When a port is enabled, access
to the entire memory array is permitted.
Interrupts
If the user chooses the interrupt function, a memory location (mail
box or message center) is assigned to each port. The left port interrupt
14
flag ( INT L ) is asserted when the right port writes to memory location
FFFE (HEX), where a write is defined as CE R = R/ W R = V IL per the
Truth Table. The left port clears the interrupt through access of
address location FFFE when CE L = OE L = V IL , R/ W is a "don't care".
Likewise, the right port interrupt flag ( INT R ) is asserted when the left
port writes to memory location FFFF (HEX) and to clear the interrupt
flag ( INT R ), the right port must read the memory location FFFF. The
message (18 bits) at FFFE or FFFF is user-defined since it is an
addressable SRAM location. If the interrupt function is not used,
address locations FFFE and FFFF are not used as mail boxes, but as
part of the random access memory. Refer to Truth Table IV for the
interrupt operation.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT70V38L15PFG8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 1.125MBIT 15NS 100TQFP |
| IDT70V38L20PF | 功能描述:IC SRAM 1.125MBIT 20NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT70V38L20PF8 | 功能描述:IC SRAM 1.125MBIT 20NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT70V38L20PFGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 1.125MBIT 20NS 100TQFP |
| IDT70V38L20PFGI8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 1.125MBIT 20NS 100TQFP |
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