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参数资料
| 型号： | IDT70V38L15PFG |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 3/17页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 1.125MBIT 15NS 100TQFP |
| 标准包装： | 12 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 1.125M（64K x 18） |
| 速度： | 15ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 100-LQFP |
| 供应商设备封装： | 100-TQFP（14x14） |
| 包装： | 托盘 |
IDT70V38L
High-Speed 3.3V 64K x 18 Dual-Port Static RAM
Pin Names
Industrial and Commercial Temperature Ranges
Left Port
CE 0L , CE 1L
R/ W L
OE L
A 0L - A 15L
I/O 0L - I/O 17L
SEM L
UB L
LB L
INT L
BUSY L
Right Port
CE 0R , CE 1R
R/ W R
OE R
A 0R - A 15R
I/O 0R - I/O 17R
SEM R
UB R
LB R
INT R
BUSY R
M/ S
V CC
GND
Names
Chip Enables
Read/Write Enable
Output Enable
Address
Data Input/Output
Semaphore Enable
Upper Byte Select
Lower Byte Select
Interrupt Flag
Busy Flag
Master or Slave Select
Power
Ground
4850 tbl 01
Absolute Maximum Ratings (1)
Symbol Rating Commercial
& Industrial
Unit
Recommended DC Operating
Conditions
Symbol Parameter Min. Typ. Max.
Unit
V TERM (2)
Terminal Voltage
with Respect
-0.5 to +4.6
V
V CC
Supply Voltage
3.0
3.3
3.6
V
to GND
GND
Ground
0
0
0
V
-0.3
T BIAS
T STG
Temperature
Under Bias
Storage
-55 to +125
-65 to +150
o
o
C
C
V IH
V IL
Input High Voltage
Input Low Voltage
2.0
(1)
____
____
V CC +0.3
0.8
(2)
V
V
Temperature
NOTES:
4850 tbl 04
I OUT
DC Output
50
mA
1. V IL > -1.5V for pulse width less than 10ns.
N OTES:
Current
4850 tbl 02
2. V TERM must not exceed Vcc + 0.3V.
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
Capacitance (1)
(T A = +25°C, f = 1.0MHz)
2. V TERM must not exceed Vcc + 0.3V for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of V TERM > Vcc + 0.3V.
Symbol
C IN
Parameter
Input Capacitance
Conditions (2)
V IN = 3dV
Max.
9
Unit
pF
Maximum Operating Temperature
and Supply Voltage
C OUT Output Capacitance V OUT = 3dV 10 pF
4850 tbl 05
NOTES:
1. This parameter is determined by device characterization but is not produc-
Grade
Commercial
Industrial
Ambient
Temperature (1)
0 O C to +70 O C
-40 O C to +85 O C
GND
0V
0V
Vcc
3.3V + 0.3V
3.3V + 0.3V
tion tested.
2. 3dV represents the interpolated capacitance when the input and output signals
switch from 0V to 3V or from 3V to 0V.
4850 tbl 03
NOTE:
1. This is the parameter T A . This is the "instant on" case temperature.
3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT70V38L15PFG8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 1.125MBIT 15NS 100TQFP |
| IDT70V38L20PF | 功能描述:IC SRAM 1.125MBIT 20NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT70V38L20PF8 | 功能描述:IC SRAM 1.125MBIT 20NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT70V38L20PFGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 1.125MBIT 20NS 100TQFP |
| IDT70V38L20PFGI8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 1.125MBIT 20NS 100TQFP |
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