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参数资料
| 型号： | IDT70V38L15PFG |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 2/17页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 1.125MBIT 15NS 100TQFP |
| 标准包装： | 12 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 1.125M（64K x 18） |
| 速度： | 15ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 100-LQFP |
| 供应商设备封装： | 100-TQFP（14x14） |
| 包装： | 托盘 |
IDT70V38L
High-Speed 3.3V 64K x 18 Dual-Port Static RAM
Description
The IDT70V38 is a high-speed 64K x 18 Dual-Port Static RAM.
The IDT70V38 is designed to be used as a stand-alone 1152K-bit
Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM
for 36-bit-or-more word system. Using the IDT MASTER/SLAVE
Dual-Port RAM approach in 36-bit or wider memory system applica-
tions results in full-speed, error-free operation without the need for
additional discrete logic.
This device provides two independent ports with separate control,
address, and I/O pins that permit independent, asynchronous access
Pin Configurations (1,2,3)
INDEX
Industrial and Commercial Temperature Ranges
for reads or writes to any location in memory. An automatic power
down feature controlled by the chip enables (either CE 0 or CE 1 )
permit the on-chip circuitry of each port to enter a very low standby
power mode.
Fabricated using IDT’s CMOS high-performance technology,
these devices typically operate on only 440mW of power.
The IDT70V38 is packaged in a 100-pin Thin Quad Flatpack
(TQFP).
75
A 9L
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76
1
A 8R
A 10L
A 11L
A 12L
A 13L
A 14L
A 15L
LB L
2
3
4
5
6
7
8
74
73
72
71
70
69
68
A 9R
A 10R
A 11R
A 12R
A 13R
A 14R
A 15R
UB L
CE 0L
CE 1L
SEM L
R/ W L
OE L
Vcc
GND
I/O 17L
I/O 16L
GND
I/O 15L
I/O 14L
I/O 13L
I/O 12L
I/O 11L
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
IDT70V38PF
PN100-1 (4)
100-Pin TQFP
Top View (5)
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
LB R
UB R
CE 0R
CE 1R
SEM R
R/ W R
GND
OE R
GND
I/O 17R
GND
I/O 16R
I/O 15R
I/O 14R
I/O 13R
I/O 12R
I/O 10L
25 51
26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
I/O 11R
.
4850 drw 02
NOTES:
1. All Vcc pins must be connected to power supply.
2. All GND pins must be connected to ground.
3. Package body is approximately 14mm x 14mm x 1.4mm.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT70V38L15PFG8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 1.125MBIT 15NS 100TQFP |
| IDT70V38L20PF | 功能描述:IC SRAM 1.125MBIT 20NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT70V38L20PF8 | 功能描述:IC SRAM 1.125MBIT 20NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT70V38L20PFGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 1.125MBIT 20NS 100TQFP |
| IDT70V38L20PFGI8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 1.125MBIT 20NS 100TQFP |
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