参数资料
型号: IDT72V3676L10PF8
厂商: IDT, Integrated Device Technology Inc
文件页数: 39/39页
文件大小: 0K
描述: IC FIFO 16384X36 10NS 128QFP
标准包装: 1,000
系列: 72V
功能: 异步
存储容量: 576K(16K x 36)
数据速率: 100MHz
访问时间: 10ns
电源电压: 3.15 V ~ 3.45 V
工作温度: 0°C ~ 70°C
安装类型: 表面贴装
封装/外壳: 128-LQFP
供应商设备封装: 128-TQFP(14x20)
包装: 带卷 (TR)
其它名称: 72V3676L10PF8
9
COMMERCIALTEMPERATURERANGE
IDT72V3656/72V3666/72V3676 3.3V CMOS TRIPLE BUS SyncFIFOTM
WITH BUS MATCHING 2,048 x 36 x 2, 4,096 x 36 x 2 and 8,192 x 36 x 2
TIMING REQUIREMENTS OVER RECOMMENDED RANGES OF SUPPLY
VOLTAGE AND OPERATING FREE-AIR TEMPERATURE
IDT72V3656L10(1)
IDT72V3656L15
IDT72V3666L10(1)
IDT72V3666L15
IDT72V3676L10(1)
IDT72V3676L15
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
fS
Clock Frequency, CLKA, CLKB, or CLKC
100
66.7
MHz
tCLK
Clock Cycle Time, CLKA, CLKB, or CLKC
10
15
ns
tCLKH
Pulse Duration, CLKA, CLKB, or CLKC HIGH
4.5
6
ns
tCLKL
Pulse Duration, CLKA, CLKB, OR CLKC LOW
4.5
6
ns
tDS
Setup Time, A0-A35 before CLKA
↑ and C0-C17 before CLKC↑
3—
4—
ns
tENS1
Setup Time,
CSA and W/RA before CLKA
↑; CSB
4
4.5
ns
before CLKB
tENS2
Setup Time, ENA, and MBA before CLKA
↑; RENB
3
4.5
ns
and MBB before CLKB
↑; WENC and MBC before CLKC↑
tRSTS
Setup Time,
MRS1, MRS2, PRS1, PRS2, RT1 or RT2
5—
ns
LOW before CLKA
↑orCLKB↑(2)
tFSS
Setup Time, FS0, FS1, FS2 before
MRS1 and MRS2 HIGH
7.5
8.5
ns
tBES
Setup Time, BE/
FWFT before MRS1 and MRS2 HIGH
7.5
7.5
ns
tSDS
Setup Time, FS0/SD before CLKA
3—
4—
ns
tSENS
Setup Time, FS1/
SEN before CLKA
3—
4—
ns
tFWS
Setup Time, BE/
FWFT before CLKA
0—
ns
tRTMS
Setup Time, RTM before RT1; RTM before RT2
5—
ns
tDH
Hold Time, A0-A35 after CLKA
↑ and C0-C17 after CLKC↑
0.5
1
ns
tENH
Hold Time,
CSA, W/RA, ENA, and MBA after CLKA
↑; CSB,
0.5
1
ns
RENB, and MBB after CLKB
↑; WENC and MBC after CLKC↑
tRSTH
Hold Time,
MRS1, MRS2, PRS1, PRS2, RT1 or RT2
4—
ns
LOW after CLKA
↑orCLKB↑(2)
tFSH
Hold Time, FS0, FS1, FS2 after
MRS1 and MRS2 HIGH
2
2
ns
tBEH
Hold Time, BE/
FWFT after MRS1 and MRS2 HIGH
2
2
ns
tSDH
Hold Time, FS0/SD after CLKA
0.5
1
ns
tSENH
Hold Time, FS1/
SEN HIGH after CLKA
0.5
1
ns
tSPH
Hold Time, FS1/
SEN HIGH after MRS1 and MRS2 HIGH
2
2
ns
tRTMH
Hold Time, RTM after RT1; RTM after RT2
5—
ns
tSKEW1(3)
Skew Time, between CLKA
↑ and CLKB↑ for EFB/ORB and
5
7.5
ns
FFA/IRA; between CLKA
↑ and CLKC↑ for EFA/ORA and
FFC/IRC
tSKEW2(3,4)
Skew Time, between CLKA
↑ andCLKB↑ forAEBandAFA;12
12
ns
between CLKA
↑ and CLKC↑ for AEA and AFC
NOTES:
1. For 10ns speed grade: Vcc = 3.3V
± 0.15V; TA = 0° to +70°.
2. Requirement to count the clock edge as one of at least four needed to reset a FIFO.
3. Skew time is not a timing constraint for proper device operation and is only included to illustrate the timing relationship among CLKA cycle, CLKB cycle, and CLKC cycle.
4. Design simulated, not tested.
(For 10ns speed grade only: Vcc = 3.3V ± 0.15V; TA = 0
°C to +70°C; JEDEC JESD8-A compliant)
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