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| 型号： | IR22141SSPBF |
| 厂商： | International Rectifier |
| 文件页数： | 12/34页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER HALF BRIDGE SGL 24SSOP |
| 标准包装： | 55 |
| 配置： | 半桥 |
| 输入类型： | 非反相 |
| 延迟时间： | 440ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 1200V |
| 电源电压： | 11.5 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 24-SSOP（0.209"，5.30mm 宽） |
| 供应商设备封装： | 24-SSOP |
| 包装： | 管件 |
| 配用： | IRMD2214SS-ND - KIT DESIGN EVAL BOARD IR2214SS IRMD22141SS-ND - KIT DESIGN EVAL BOARD/IR22141SS |
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IR21141/IR22141SSPbF
1.4 Fault Management
1 Features Description
1.1 Start-Up Sequence
At power supply start-up, it is recommended to keep the
FLT_CLR pin active until the supply voltages are
properly established. This prevents spurious diagnostic
signals being generated.
When the bootstrap supply topology is used for
supplying the floating high side stage, the following start-
The IR21141/IR22141 is able to manage supply failure
(undervoltage lockout) and transistor desaturation (on
both the low and high side switches).
1.4.1 Undervoltage (UV)
The undervoltage protection function disables the
driver’s output stage which prevents the power device
from being driven when the input voltage is less than the
undervoltage threshold. Both the low side (V CC supplied)
and the floating side (V BS supplied) are controlled by a
dedicate undervoltage function.
up sequence is recommended (see also Fig. 12):
An undervoltage event on the V CC
pin (when
1.
2.
3.
4.
5.
Set V CC ,
Set FLT_CLR pin to HIGH level,
Set LIN pin to HIGH level and charge the
bootstrap capacitor,
Release LIN pin to LOW level,
Release FLT_CLR pin to LOW level.
VCC
FLT_CLR
LIN
LO
V CC < UV VCC- ) generates a diagnostic signal by forcing
the FAULT/SD pin low (see FAULT/SD section and Fig.
14). This event disables both the low side and floating
drivers and the diagnostic signal holds until the
undervoltage condition is over. The fault condition is not
latched and the FAULT/SD pin is released once V CC
becomes higher than UV VCC+ .
The V BS undervoltage protection works by disabling only
the floating driver. Undervoltage on V BS does not prevent
the low side driver from activating its output nor does it
generate diagnostic signals. The V BS undervoltage
condition (V BS < UV VBS- ) latches the high side output
stage in the low state. V BS must exceed the UV VBS+
threshold to return the device to its normal operating
mode. To turn on the floating driver, H IN must be re-
Figure 12 Start-Up Sequence
A minimum 15 μs LIN and FLT-CLR pulse is required.
A minimum supply voltage of 8V is recommended for the
driver to operate safely under switching conditions at VS
pin. At lower supply the gate driving capability decreases
and might become not sufficient to counteract switching
charge injected to the outputs.
1.2 Normal Operation Mode
After the start-up sequence has completed, the device
becomes fully operative (see grey blocks in the State
Diagram).
HIN and LIN produce driver outputs to switch
accordingly, while the input logic monitors the input
signals and deadtime (DT) prevent shoot-through events
from occurring.
1.3 Shutdown
The system controller can asynchronously command the
Hard Shutdown (HSD) through the 3.3 V compatible
CMOS I/O FAULT/SD pin. This event is not latched.
In a multi-phase system, FAULT/SD signals are or-ed so
the controller or one of the gate drivers can force the
simultaneous shutdown of the other gate drivers through
the same pin.
www.irf.com
12
asserted high (rising edge event on H IN is required).
1.4.2 Power Devices Desaturation
Different causes can generate a power inverter failure
(phase and/or rail supply short-circuit, overload
conditions induced by the load, etc.). In all of these fault
conditions, a large increase in current results in the
IGBT.
The IR21141/IR22141 fault detection circuit monitors the
IGBT emitter to collector voltage (V CE ) (an external high
voltage diode is connected between the IGBT’s collector
and the ICs DSH or DSL pins). A high current in the
IGBT may cause the transistor to desaturate; this
condition results in an increase of V CE .
Once in desaturation, the current in the power transistor
can be as high as 10 times the nominal current.
Whenever the transistor is switched off, this high current
generates relevant voltage transients in the power stage
that need to be smoothed out in order to avoid
destruction (by over-voltage). The gate driver is able to
control the transient condition by smoothly turning off the
desaturated transistor with its integrated soft shutdown
(SSD) protection.
1.4.3 Desaturation Detection: DSH/L Function
Figure 13 shows the structure of the desaturation
sensing and soft shutdown block. This configuration is
the same for both the high and low side output stages.
? 2009 International Rectifier
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相关代理商/技术参数 |
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|---|---|
| IR22141SSPBF | 制造商:International Rectifier 功能描述:Driver IC |
| IR22141SSTRPBF | 功能描述:功率驱动器IC Hlf Brdg Drvr IC for Pwr Swtch App RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR2214SS | 功能描述:IC DRIVER HALF BRIDGE SGL 24SSOP RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| IR2214SSPBF | 功能描述:功率驱动器IC 1200V HALF BRDG DRVR IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR2214SSPBF | 制造商:International Rectifier 功能描述:Driver IC |
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