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| 型号： | IR22141SSPBF |
| 厂商： | International Rectifier |
| 文件页数： | 18/34页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER HALF BRIDGE SGL 24SSOP |
| 标准包装： | 55 |
| 配置： | 半桥 |
| 输入类型： | 非反相 |
| 延迟时间： | 440ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 1200V |
| 电源电压： | 11.5 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 24-SSOP（0.209"，5.30mm 宽） |
| 供应商设备封装： | 24-SSOP |
| 包装： | 管件 |
| 配用： | IRMD2214SS-ND - KIT DESIGN EVAL BOARD IR2214SS IRMD22141SS-ND - KIT DESIGN EVAL BOARD/IR22141SS |
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IR21141/IR22141SSPbF
2.3 Some Important Considerations
minimize the amount of charge fed back from the
bootstrap capacitor to V CC supply.
Voltage Ripple: There are three different cases to
consider (refer to Fig. 19).
I LOAD < 0 A; the load current flows in the low side
IGBT (resulting in V CEon ).
V BS = V CC ? V F ? V CEon
In this case we have the lowest value for V BS . This
represents the worst case for the bootstrap capacitor
sizing. When the IGBT is turned off, the V s node is
pushed up by the load current until the high side
freewheeling diode is forwarded biased.
I LOAD = 0 A; the IGBT is not loaded while being on
and V CE can be neglected
2.4 Gate Resistances
The switching speed of the output transistor can be
controlled by properly sizing the resistors controlling the
turn-on and turn-off gate currents. The following section
provides some basic rules for sizing the resistors to
obtain the desired switching time and speed by
introducing the equivalent output resistance of the gate
driver ( R DRp and R DRn ).
The example shown uses IGBT power transistors and
Figure 20 shows the nomenclature used in the following
paragraphs. In addition, V ge* indicates the plateau
voltage, Q gc and Q ge indicate the gate to collector and
gate to emitter charge respectively.
V BS = V CC ? V F
C RES
I C
I LOAD > 0 A; the load current flows through the
freewheeling diode
V GE
V BS = V CC ? V F + V FP
t 1 ,Q GE
V CE
t 2 ,Q GC
dV/dt
In this case we have the highest value for V BS . Turning
on the high side IGBT, I LOAD flows into it and V S is
pulled up. To minimize the risk of undervoltage, the
bootstrap capacitor should be sized according to the
I LOAD < 0 A case.
Bootstrap Resistor: A resistor (R boot ) is placed in series
V ge *
10%
90%
10%
C RES
I C
V GE
C RESon
C RESoff
with the bootstrap diode (see Fig. 19) in order to limit
the current when the bootstrap capacitor is initially
t,Q
charged. We suggest not exceeding 10
to avoid
increasing the V BS time-constant. The minimum on time
t SW
for charging the bootstrap capacitor or for refreshing its
charge must be verified against this time-constant.
t Don
t R
Bootstrap Capacitor: For high t HON designs where an
electrolytic capacitor is used, its ESR must be
considered. This parasitic resistance forms a voltage
divider with R boot , which generats a voltage step on V BS
at the first charge of bootstrap capacitor. The voltage
step and the related speed (dV BS /dt) should be limited.
As a general rule, ESR should meet the following
constraint.
Figure 20: Nomenclature
2.5 Sizing The Turn-On Gate Resistor
Switching-Time: For the matters of the calculation
included hereafter, the switching time t sw is defined
as the time spent to reach the end of the plateau
voltage (a total Q gc + Q ge has been provided to the
IGBT gate). To obtain the desired switching time the
gate resistance can be sized starting from Q ge and
Q gc , Vcc , V ge* (see Fig. 21):
A parallel combination of a small ceramic capacitor and
a large electrolytic capacitor is normally the best
compromise, the first capacitor posses a fast time
constant and limits the dV BS /dt by reducing the
equivalent resistance. The second capacitor provides a
large capacitance to maintain the V BS voltage drop
and
I avg =
Q gc + Q ge
t sw
within the desired ? V BS .
Bootstrap Diode: The diode must have a BV > 600 V or
1200 V and a fast recovery time (t rr < 100 ns) to
www.irf.com
18
R TOT =
Vcc ? V ge *
I avg
? 2009 International Rectifier
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| IR22141SSPBF | 制造商:International Rectifier 功能描述:Driver IC |
| IR22141SSTRPBF | 功能描述:功率驱动器IC Hlf Brdg Drvr IC for Pwr Swtch App RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR2214SS | 功能描述:IC DRIVER HALF BRIDGE SGL 24SSOP RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| IR2214SSPBF | 功能描述:功率驱动器IC 1200V HALF BRDG DRVR IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR2214SSPBF | 制造商:International Rectifier 功能描述:Driver IC |
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