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参数资料
| 型号： | IR3522MTRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 6/32页 |
| 文件大小： | 0K |
| 描述： | IC CTRL XPHASE3 DDR/VVT 32-MLPQ |
| 标准包装： | 3,000 |
| 系列： | XPhase3™ |
| 应用： | 处理器 |
| 电流 - 电源： | 7mA |
| 电源电压： | 4.75 V ~ 7.5 V |
| 工作温度： | 0°C ~ 100°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 32-VFQFN 裸露焊盘 |
| 供应商设备封装： | 32-MLPQ（5x5） |
| 包装： | 带卷 (TR) |
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IR3522
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
Soft Start and Soft Stop
Start Delay
Start-up Time
SS/DEL1 to FB1 Input Offset
Measure Enable to EAOUT1 activation
Measure Enable activation to PGOOD
With FB1 = 0V, adjust V(SS/DEL1) until
1
3
0.7
2.9
8
1.4
3.5
13
1.9
ms
ms
V
Voltage
EAOUT1 drives high
Charge Current
Soft Stop Discharge Currents
Charge Voltage
Discharge Comp. Threshold
Delay Comparator Threshold
Relative to Charge Voltage, SS/DELx
-20
25
3.7
150
-45
55
4
220
80
-90
105
4.2
300
μ A
μ A
V
mV
mV
rising Note 1
Delay Comparator Threshold
Relative to Charge Voltage, SS/DELx
120
mV
falling Note 1
Delay Comparator Hysteresis
Note 1
40
mV
IINx Bias Current
SRD Comp. Rise Threshold
SRD Comp. Fall Threshold
SRD Comp Hysteresis
-1
330
310
15
0
390
360
30
1
440
425
50
uA
mV
mV
mV
IIN1 High Voltage
Measure V(VCCL)-V(IIN1)
0
1.2
V
Error Amplifiers
VOUT1 System Set-Point
(Deviation from Table 2 and per test
-0.5
0.5
%
Accuracy
circuit in Figures 2A)
VOUT2 Tracking Accuracy
(Deviation from Table 2, and 3 per test
-1.0
1.0
%
circuit in Figures 2B)
Input Offset Voltage
Measure V(FB1) – V(VREF1).
-1
0
1
mV
Measure V(FB2) – V(VOUT1)/2. Note 2
FB1, FB2 Bias Currents
-1
0
1
μ A
DC Gain
Bandwidth
Slew Rate
Sink Current
Source Current
Maximum Voltage
Minimum Voltage
Open Control Loop Detection
Note 1
Note 1
Note 1
Measure V(VCCL) – V(EAOUTx)
Measure V(VCCL) - V(EAOUTx),
100
20
5.5
0.4
5.0
500
125
110
30
12
0.85
8.5
780
120
300
135
40
20
1.2
12.0
950
250
600
dB
MHz
V/ μ s
mA
mA
mV
mV
mV
Threshold
Relative to Error Amplifier maximum
voltage.
Open Control Loop Detection
Delay
Measure PHSOUT pulse numbers from
V(EAOUTx)=V(VCCL) to PGOOD = low.
8
Pulses
FB2 Activation Voltage
With FB2 grounded, V(VOUT1)/2 when
40
70
100
mV
EAOUT2 drives high
VREF1 Reference
Source and Sink Currents
Includes I(OCSET1) and I(OCSET2)
-8%
2000*Vrosc(V)
/ ROSC(k )
+8%
μ A
POWER GOOD (PGOOD) Output
Under Voltage Threshold - Voutx
VOUT1 referenced to VREF1
-365
-315
-265
mV
Decreasing
VOUT2 referenced to VOUT1/2
Under Voltage Threshold - Voutx
VOUT1 referenced to VREF1
-325
-275
-225
mV
Increasing
VOUT2 referenced to VOUT1/2
Under Voltage Threshold
5
53
110
mV
Hysteresis
Output Voltage
Leakage Current
PGBIAS Activation Threshold
I(PGOOD) = 3mA
V( PGOOD ) = 5.5V
I( PGOOD )=2mA, V(PGOOD) = 300mV
150
0
2
300
10
3.5
mV
μ A
V
PGBIAS Clamp Voltage
I(PGBIAS) = 100uA
3
4.5
6.5
V
I(PGBIAS)max
Page 6
100
V3.01
uA
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相关代理商/技术参数 |
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| IR3523 | 制造商:IRF 制造商全称:International Rectifier 功能描述:XPHASE3TM DUAL OUTPUT CONTROL IC |
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