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| 型号： | IRF3610STRLPBF |
| 厂商： | International Rectifier |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 103A D2PAK |
| 标准包装： | 1 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 103A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 11.6 毫欧 @ 62A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 150nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 5380pF @ 25V |
| 功率 - 最大： | 333W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 标准包装 |
| 其它名称： | IRF3610STRLPBFDKR |
IRF3610SPbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
D
S
HEXFET ? Power MOSFET
V DSS 100V
R DS(on) typ. 9.3m ?
max. 11.6m ?
I D
103A
Benefits
l
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l
l
l
Fully Characterized Capacitance and Avalanche
SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
D
S
G
D 2 Pak
IRF3610SPbF
Absolute Maximum Ratings
G
Gate
D
Drain
S
Source
Symbol
I D @ T C = 25°C
I D @ T C = 100°C
I DM
P D @T C = 25°C
V GS
dv/dt
Parameter
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Max.
103
73
410
333
2.2
± 20
23
Units
A
W
W/°C
V
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 175
300 (1.6mm from case)
°C
Avalanche Characteristics
E AS
I AR
E AR
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
460
See Fig. 14, 15, 22a, 22b
mJ
A
mJ
Thermal Resistance
R θ JC
Symbol
Junction-to-Case
Parameter
Typ.
–––
Max.
0.50
Units
°C/W
R θ JA
1
Junction-to-Ambient (PCB Mount)
www.irf.com ? 2014 International Rectifier
–––
Submit Datasheet Feedback
40
March 26, 2014
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