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| 型号： | IRF3610STRLPBF |
| 厂商： | International Rectifier |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 103A D2PAK |
| 标准包装： | 1 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 103A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 11.6 毫欧 @ 62A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 150nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 5380pF @ 25V |
| 功率 - 最大： | 333W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 标准包装 |
| 其它名称： | IRF3610STRLPBFDKR |
IRF3610SPbF
Static @ T J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V (BR)DSS
? V (BR)DSS / ? T J
R DS(on)
V GS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
100
–––
–––
2.0
–––
0.10
9.3
–––
–––
–––
11.6
4.0
V V GS = 0V, I D = 250μA
V/°C Reference to 25°C, I D = 1.0mA
m ? V GS = 10V, I D = 62A
V V DS = V GS , I D = 250μA
gfs
R G
I DSS
Forward Transconductance
Internal Gate Resistance
Drain-to-Source Leakage Current
110
–––
–––
–––
2.2
–––
–––
–––
20
S
?
μA
V DS = 25V, I D = 62A
V DS = 100V, V GS = 0V
–––
–––
250
V DS = 100V, V GS = 0V, T J = 125°C
I GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
–––
–––
200
-200
nA
V GS = 20V
V GS = -20V
Dynamic @ T J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Q g
Q gs
Q gd
Q sync
t d(on)
t r
t d(off)
t f
C iss
C oss
C rss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q g - Q gd )
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
100
23
42
58
15
55
77
43
5380
690
100
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
ns
pF
I D = 62A
V DS =50V
V GS = 10V
I D = 62A, V DS =0V, V GS = 10V
V DD = 65V
I D = 62A
R G = 2.7 ?
V GS = 10V
V GS = 0V
V DS = 25V
? = 1.0 MHz, See Fig. 5
C oss eff. (ER)
C oss eff. (TR)
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
–––
–––
560
750
–––
–––
V GS = 0V, V DS = 0V to 80V
V GS = 0V, V DS = 0V to 80V
, See Fig. 11
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
I S
Continuous Source Current
–––
–––
103
A
MOSFET symbol
D
(Body Diode)
showing the
I SM
Pulsed Source Current
–––
–––
410
A
integral reverse
G
(Body Diode)
p-n junction diode.
S
T J = 25°C
V SD
t rr
Q rr
I RRM
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
––– ––– 1.3 V
––– 110 ––– ns
––– 120 –––
––– 570 ––– nC
––– 710 –––
––– -9.5 ––– A
T J = 25°C, I S = 62A, V GS = 0V
T J = 25°C V R = 85V,
T J = 125°C I F = 62A
di/dt = 100A/μs
T J = 125°C
T J = 25°C
t on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
? Repetitive rating; pulse width limited by max. junction
temperature.
? Limited by T Jmax , starting T J = 25°C, L = 0.24mH
R G = 50 ? , I AS = 62A, V GS =10V. Part not recommended for use
above this value.
? I SD ≤ 62A, di/dt ≤ 1935A/μs, V DD ≤ V (BR)DSS , T J ≤ 175°C.
? Pulse width ≤ 400μs; duty cycle ≤ 2%.
? C oss eff. (TR) is a fixed capacitance that gives the same charging
time as C oss while V DS is rising from 0 to 80% V DSS .
? C oss eff. (ER) is a fixed capacitance that gives the same energy as
C oss while V DS is rising from 0 to 80% V DSS .
? When mounted on 1" square PCB (FR-4 or G-10 Material). For recom-
mended footprint and soldering techniques refer to application note #AN-994.
? R θ is measured at T J approximately 90°C.
? R θ JC value shown is at time zero.
2
www.irf.com ? 2014 International Rectifier
Submit Datasheet Feedback
March 26, 2014
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