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参数资料
| 型号： | IRF520 |
| 厂商： | 意法半导体 |
| 英文描述： | N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式功率MOSFET) |
| 中文描述： | N沟道增强模式功率MOS晶体管（不适用沟道增强模式功率MOSFET的） |
| 文件页数： | 2/9页 |
| 文件大小： | 181K |
| 代理商： | IRF520 |
THERMAL DATA
TO-220
ISOWATT220
R
thj-case
Thermal Resistance Junction-case
Max
2.14
4.29
o
C/W
o
C/W
o
C/W
C
R
thj-amb
R
thc-s
T
l
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Typ
62.5
0.5
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 25 V)
Repetitive Avalanche Energy
(pulse width limited by T
j
max,
δ
< 1%)
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100
o
C, pulse width limited by T
j
max,
δ
< 1%)
10
A
E
AS
36
mJ
E
AR
9
mJ
I
AR
7
A
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
μ
A
V
GS
= 0
100
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating x 0.8
V
GS
=
±
20 V
T
c
= 125
o
C
250
1000
μ
A
μ
A
nA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
±
100
ON (
)
Symbol
Parameter
Test Conditions
I
D
= 250
μ
A
I
D
= 5 A
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
2
2.9
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V
0.23
0.27
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
10
A
DYNAMIC
Symbol
g
fs
(
)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 5 A
2.7
4.5
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
330
90
25
450
120
40
pF
pF
pF
IRF520/FI
2/9
相关PDF资料 |
PDF描述 |
|---|---|
| IRF520FI | N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式功率MOSFET) |
| IRF530FP | N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式功率MOS晶体管) |
| IRF530 | N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式功率MOSFET) |
| IRF620FI | N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式功率MOSFET) |
| IRF620 | N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式功率MOSFET) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF520_R4941 | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF520A | 功能描述:MOSFET 9.2A 100V .4 OHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF520CHIP | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.2A I(D) | CHIP |
| IRF520FI | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
| IRF520L | 制造商:IRF 制造商全称:International Rectifier 功能描述:Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A) |
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