- 您现在的位置：买卖IC网 > PDF目录175864 > IRF540 (MOTOROLA INC) 100V，27A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate）(100V，27A TMOS功率场效应管（N沟道增强型硅门）) PDF资料下载
参数资料
| 型号： | IRF540 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 100V，27A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate）(100V，27A TMOS功率场效应管（N沟道增强型硅门）) |
| 中文描述： | 27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 142K |
| 代理商： | IRF540 |
1
Motorola TMOS Power MOSFET Transistor Device Data
Product Preview
TMOS E-FET.
Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS power FET is designed to withstand high
energy in the avalanche and commutation modes. This new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters, and PWM motor
controls. These devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating area
are critical and offer additional safety margin against unexpected
voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
100
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
100
Vdc
Gate–to–Source Voltage — Continuous
Gate–to–Source Voltage — Non–repetitive (tp ≤ 10 ms)
VGS
VGSM
±20
±40
Vdc
Vpk
Drain Current — Continuous
Drain Current — Continuous @ 100
°C
Drain Current — Single Pulse (tp ≤ 10 ms)
ID
IDM
27
19
95
Adc
Apk
Total Power Dissipation
Derate above 25
°C
PD
145
1.16
Watts
W/
°C
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — STARTING TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, PEAK IL = 27 Apk, L = 1.0 mH, RG = 25 W)
EAS
365
mJ
Thermal Resistance — Junction–to–Case
°
Thermal Resistance — Junction–to–Ambient
°
R
θJC
R
θJA
0.86
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
REV 3
Order this document
by IRF540/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
IRF540
TMOS POWER FET
27 AMPERES
100 VOLTS
RDS(on) = 0.070 OHMS
D
S
G
CASE 221A–09
TO-220AB
Motorola, Inc. 1998
相关PDF资料 |
PDF描述 |
|---|---|
| IRF620-009 | 5.2 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| IRF6215-024PBF | 11 A, 150 V, 0.29 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| IRF6215-011PBF | 11 A, 150 V, 0.29 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| IRF6215-010PBF | 11 A, 150 V, 0.29 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| IRF6215-005PBF | 11 A, 150 V, 0.29 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF-540 | 制造商:International Rectifier 功能描述: |
| IRF540,127 | 功能描述:MOSFET RAIL IR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF540/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:N-Channel Enhancement-Mode Silicon Gate |
| IRF540_03 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 100V - 0.055ヘ - 22A TO-220 LOW GATE CHARGE STripFET⑩ II POWER MOSFET |
| IRF540_R4941 | 功能描述:MOSFET USE 512-IRF540A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。