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参数资料
| 型号： | IRF540 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 100V，27A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate）(100V，27A TMOS功率场效应管（N沟道增强型硅门）) |
| 中文描述： | 27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 142K |
| 代理商： | IRF540 |
IRF540
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–to–Source Leakage Current
versus Voltage
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
I DSS
,LEAKAGE
(nA)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
I D
,DRAIN
CURRENT
(AMPS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
55
45
10
5
10
8
6
4
2
0
60
40
30
20
10
23
4
5
6
7
8
0
40
30
20
10
0
0.050
0.035
0.030
010
20
30
55
0.6
0.2
0
150
25
0
–25
–50
7 V
6 V
5 V
VDS ≥ 10 V
TJ = 100°C
25
°C
TJ = 25°C
I D
,DRAIN
CURRENT
(AMPS)
VGS = 10 V
0
VGS = 10 V
5
15
25
35
55
5
15
25
35
020
50
70
110
10
30
60
100
0
0.4
1000
10
100
1
3
579
0.02
50
20
15
30
25
40
35
50
TJ = 25°C
8 V
9 V
50
45
–55
°C
0.01
0.04
0.03
0.06
0.05
0.08
0.07
0.09
TJ = –55°C
25
°C
100
°C
40
50
45
0.045
0.040
0.060
0.055
VGS = 0 V
15 V
100
75
125
1.2
0.8
1.0
1.4
2.0
1.6
1.8
VGS = 10 V
ID = 15 A
40
90
80
TJ = 125°C
100
°C
VGS = 10 V
(NORMALIZED)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF-540 | 制造商:International Rectifier 功能描述: |
| IRF540,127 | 功能描述:MOSFET RAIL IR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF540/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:N-Channel Enhancement-Mode Silicon Gate |
| IRF540_03 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 100V - 0.055ヘ - 22A TO-220 LOW GATE CHARGE STripFET⑩ II POWER MOSFET |
| IRF540_R4941 | 功能描述:MOSFET USE 512-IRF540A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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