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参数资料
| 型号： | IRF540 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 100V，27A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate）(100V，27A TMOS功率场效应管（N沟道增强型硅门）) |
| 中文描述： | 27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 142K |
| 代理商： | IRF540 |
IRF540
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
100
—
116
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 100 Vdc, VGS = 0 Vdc)
(VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
10
100
mAdc
Gate–Body Leakage Current
(VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
—
100
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
Cpk
≥ 2.0(3)
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
—
2.9
6.8
4.0
—
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
Cpk
≥ 2.0(3)
(VGS = 10 Vdc, ID = 15 Adc)
RDS(on)
—
0.047
0.070
Ohms
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 27 Adc)
(VGS = 10 Vdc, ID = 15 Adc, TJ = 125°C)
VDS(on)
—
1.9
1.8
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 15 Adc)
gFS
6.0
15
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vdc V
0 Vdc
Ciss
—
1460
1600
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
390
800
Transfer Capacitance
f = 1.0 MHz)
Crss
—
120
300
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(V
30 Vd
I
15 Ad
td(on)
—
11.6
30
ns
Rise Time
(VDD = 30 Vdc, ID = 15 Adc,
tr
—
50
60
Turn–Off Delay Time
( DD
, D
,
VGS = 10 Vdc, RG = 4.7 )
td(off)
—
26
80
Fall Time
tf
—
19
30
Gate Charge
(V
80 Vd
I
27 Ad
QT
—
50
60
nC
(See Figure 8)
(VDS = 80 Vdc, ID = 27 Adc,
Q1
—
9.0
—
( DS
, D
,
VGS = 10 Vdc)
Q2
—
26
—
Q3
—
20
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 27 Adc, VGS = 0 Vdc)
(IS = 27 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
0.93
0.84
2.4
—
Vdc
Reverse Recovery Time
(I
27 Ad
V
0 Vd
trr
—
110
—
ns
(IS = 27 Adc, VGS = 0 Vdc,
ta
—
100
—
( S
,
GS
,
dIS/dt = 100 A/s)
tb
—
10
—
Reverse Recovery Stored Charge
QRR
—
0.67
—
mC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the contact screw on tab to center of die)
(Measured from the drain lead 0.25
″ from package to center of die)
Ld
—
3.5
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
Ls
—
7.5
—
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values. Cpk +
Max limit – Typ
3
sigma
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