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参数资料
| 型号： | IRF540 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 100V，27A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate）(100V，27A TMOS功率场效应管（N沟道增强型硅门）) |
| 中文描述： | 27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 142K |
| 代理商： | IRF540 |
IRF540
4
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate–to–Source and
Drain–to–Source Voltage versus Total Charge
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus
Current
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
I D
,DRAIN
CURRENT
(AMPS)
E
AS
,SINGLE
PULSE
DRAIN–T
O–SOURCE
t,TIME
(ns)
V
GS
,GA
TE–T
O–SOURCE
VOL
TAGE
(VOL
TS)
I S
,SOURCE
CURRENT
(AMPS)
4500
1000
500
25
10
–5
10
4
3
2
1
0
5
10
15
20
25
50
1.0
10
20
5
0
0.55
0.6
0.7
0.75
0.95
1.0
1000
1.0
0.1
TJ = 25°C
VGS = 0 V
C,
CAP
ACIT
ANCE
(pF)
0
1.0
100
0.65
0.8
25
50
75
150
0
400
0
100
–10
0
5
15
20
10
2000
1500
3000
2500
4000
3500
5
100
1000
0.9
0.85
15
10
30
25
ID = 27 A
100
10
1000
100
125
50
200
150
300
250
350
30
35
40
45
6
7
8
9
TJ = 25°C
ID = 27 A
VDS
VGS
QT
Q3
Q1
Q2
V
DS
,DRAIN–T
O–SOURCE
VOL
TAGE
(VOL
TS)
80
72
64
56
48
40
32
24
16
8
0
TJ = 25°C
ID = 15 A
VDD = 30 V
VGS = 10 V
VGS = 20 V
SINGLE PULSE
TC = 25°C
VGS = 0 V
VDS = 0 V
TJ = 25°C
Ciss
Crss
Ciss
Coss
VGS
VDS
td(off)
td(on)
tf
tr
100
ms
1.0 ms
10 ms
dc
10
ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
A
V
ALANCHE
ENERGY
(mJ)
10
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF-540 | 制造商:International Rectifier 功能描述: |
| IRF540,127 | 功能描述:MOSFET RAIL IR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF540/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:N-Channel Enhancement-Mode Silicon Gate |
| IRF540_03 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 100V - 0.055ヘ - 22A TO-220 LOW GATE CHARGE STripFET⑩ II POWER MOSFET |
| IRF540_R4941 | 功能描述:MOSFET USE 512-IRF540A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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