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参数资料
| 型号： | IRF7416QTRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 10A 8-SOIC |
| 产品目录绘图： | IR Hexfet 8-SOIC |
| 标准包装： | 1 |
| 系列： | HEXFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 10A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 20 毫欧 @ 5.6A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 92nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1700pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 其它名称： | IRF7416QTRPBFDKR |
PD - 96124B
IRF7416QPbF
HEXFET ? Power MOSFET
l
l
l
l
l
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Advanced Process Technology
Ultra Low On-Resistance
P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
S
S
S
G
1
2
3
4
8
7
6
5
A
D
D
D
D
V DSS = -30V
R DS(on) = 0.02 Ω
Top View
Description
These HEXFET ? Power MOSFET's in package utilize
the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features
of these HEXFET Power MOSFET's are a 150°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These
benefits combine to make this design an extremely
efficient and reliable device for use in a wide variety of
applications.
The efficient SO-8 package provides enhanced thermal
characteristics making it ideal in a variety of power
applications. This surface mount SO-8 can dramatically
reduce board space and is also available in Tape &
Reel.
Absolute Maximum Ratings
SO-8
Parameter
Max.
Units
I D @ T A = 25°C
Continuous Drain Current, V GS @ -10V
-10
I D @ T A = 70°C
I DM
P D @T A = 25°C
V GS
E AS
dv/dt
T J
T STG
Continuous Drain Current, V GS @ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
-7.1
-45
2.5
0.02
± 20
370
-5.0
-55 to + 150
A
W
W/°C
V
mJ
V/ns
°C
Thermal Resistance
Parameter
Max.
Units
R θ JA
www.irf.com
Junction-to-Ambient
50
°C/W
1
06/29/11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF7416TR | 制造商:International Rectifier 功能描述: 制造商:International Rectifier 功能描述:MOSFET Transistor, P-Channel, SO |
| IRF7416TRPBF | 功能描述:MOSFET MOSFT PCh -30V -10A 20mOhm 61nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7416TRPBF-CUT TAPE | 制造商:IR 功能描述:Single P-Channel 30 V 2.5 W 61 nC Hexfet Power Mosfet Surface Mount - SOIC-8 |
| IRF741R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 10A I(D) | TO-220AB |
| IRF742 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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