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| 型号： | IRF7526D1TR |
| 厂商： | International Rectifier |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 2A MICRO8 |
| 标准包装： | 4,000 |
| 系列： | FETKY™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 200 毫欧 @ 1.2A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 11nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 180pF @ 25V |
| 功率 - 最大： | 1.25W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | Micro8? |
| 包装： | 带卷 (TR) |
PD -91649C
IRF7526D1
FETKY TM MOSFET & Schottky Diode
l
l
l
l
l
Co-packaged HEXFET ? Power
MOSFET and Schottky Diode
P-Channel HEXFET
Low V F Schottky Rectifier
Generation 5 Technology
Micro8 TM Footprint
A
A
S
G
1
2
3
4
8
7
6
5
K
K
D
D
V DSS = -30V
R DS(on) = 0.20 ?
Schottky Vf = 0.39V
The FETKY
Description
TM
T op V ie w
family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
The new Micro8 package, with half the footprint area of the standard SO-8, provides
the smallest footprint available in an SOIC outline. This makes the Micro8
an ideal
TM
TM
device for applications where printed circuit board space is at a premium. The low
Micro8
TM
profile (<1.1mm) of the Micro8
TM
will allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
Maximum
Units
I D @ T A = 25°C
I D @ T A = 70°C
I DM
P D @T A = 25°C
P D @T A = 70°C
V GS
dv/dt
T J, T STG
Continuous Drain Current, V GS @ -4.5V
Pulsed Drain Current ?
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ?
Junction and Storage Temperature Range
-2.0
-1.6
-16
1.25
0.8
10
± 20
-5.0
-55 to +150
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
Maximum
Units
R θ JA
Junction-to-Ambient ?
100
°C/W
Notes:
? Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)
? I SD ≤ -1.2A, di/dt ≤ 160A/μs, V DD ≤ V (BR)DSS , T J ≤ 150°C
? Pulse width ≤ 300μs – duty cycle ≤ 2%
? When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
www.irf.com
1
5/7/99
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF7526D1TRPBF | 功能描述:MOSFET MOSFT PCh w/Schttky -2A 200mOhm 7.5nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7530 | 制造商:IRF 制造商全称:International Rectifier 功能描述:Power MOSFET(Vdss=20V, Rds(on)=0.030ohm) |
| IRF7530PBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7530PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRF7530TR | 功能描述:MOSFET 2N-CH 20V 5.4A MICRO8 RoHS:否 类别:分离式半导体产品 >> FET - 阵列 系列:HEXFET® 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
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