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参数资料
| 型号： | IRF7805QTRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 13A 8-SOIC |
| 产品目录绘图： | IR Hexfet 8-SOIC |
| 标准包装： | 1 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 13A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 11 毫欧 @ 7A，4.5V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 31nC @ 5V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 产品目录页面： | 1523 (CN2011-ZH PDF) |
| 其它名称： | IRF7805QTRPBFDKR |
PD – 96114B
IRF7805QPbF
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Advanced Process Technology
Ultra Low On-Resistance
N Channel MOSFET
l
l
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Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
S
S
S
1
2
3
8
7
6
A
D
D
D
Description
These HEXFET ? Power MOSFET's in package utilize
SO-8
G
4
T o p V ie w
5
D
the lastest processing techniques to achieve
extremely low on-resistance per silicon area.
Additional features of these HEXFET Power
MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable
device for use in a wide variety of applications.
The efficient SO-8 package provides enhanced
thermal characteristics making it ideal in a variety of
power applications. This surface mount SO-8 can
dramatically reduce board space and is also available
in Tape & Reel.
Absolute Maximum Ratings
Device Features
IRF7805Q
V DS 30V
R DS(on) 11m Ω
Qg 31nC
Qsw 11.5nC
Qoss 36nC
Parameter
Max.
Units
V DS
V GS
I D @ T A = 25°C
I D @ T A = 70°C
I DM
P D @T A = 25°C
P D @T A = 70°C
T J
T STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
30
± 12
13
10
100
2.5
1.6
0.02
-55 to + 150
V
A
W
W/°C
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JL
R θ JA
Junction-to-Drain Lead
Junction-to-Ambient
–––
–––
20
50
°C/W
www.irf.com
1
03/30/11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF7805TR | 制造商:International Rectifier 功能描述: |
| IRF7805TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 13A 8-Pin SOIC T/R |
| IRF7805TRPBF | 功能描述:MOSFET MOSFT 30V 13A 11mOhm 22nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7805Z | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRF7805ZGPBF | 功能描述:MOSFET HEXFET High POL 4.5V VGS 30VDSS 18nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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