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参数资料
| 型号： | IRFD014 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | JFETs |
| 英文描述： | 1.7 A, 60 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HVMDIP-4 |
| 文件页数： | 2/9页 |
| 文件大小： | 2019K |
| 代理商： | IRFD014 |
www.vishay.com
Document Number: 91125
2
S10-2466-Rev. C, 25-Oct-10
IRFD014, SiHFD014
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
-
120
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 μA
60
-
V
VDS Temperature Coefficient
V
DS/TJ
Reference to 25 °C, ID = 1 mA
-
0.063
-
V/°C
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
-
25
μA
VDS = 48 V, VGS = 0 V, TJ = 150 °C
-
250
Drain-Source On-State Resistance
RDS(on)
VGS = 10 V
ID = 1.0 Ab
-
0.20
Forward Transconductance
gfs
VDS = 25 V, ID = 1.0 Ab
0.96
-
S
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
310
-
pF
Output Capacitance
Coss
-
160
-
Reverse Transfer Capacitance
Crss
-37
-
Total Gate Charge
Qg
VGS = 10 V
ID = 10 A, VDS = 48 V
see fig. 6 and 13b
--
11
nC
Gate-Source Charge
Qgs
--
3.1
Gate-Drain Charge
Qgd
--
5.8
Turn-On Delay Time
td(on)
VDD = 30 V, ID = 10 A
Rg = 24 , RD = 2.7 , see fig. 10b
-10
-
ns
Rise Time
tr
-50
-
Turn-Off Delay Time
td(off)
-13
-
Fall Time
tf
-19
-
Internal Drain Inductance
LD
Between lead,
6 mm (0.25") from
package and center of
die contact
-4.0
-
nH
Internal Source Inductance
LS
-6.0
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--
1.7
A
Pulsed Diode Forward Currenta
ISM
--
14
Body Diode Voltage
VSD
TJ = 25 °C, IS = 1.7 A, VGS = 0 Vb
--
1.6
V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μsb
-
70
140
ns
Body Diode Reverse Recovery Charge
Qrr
-
0.20
0.40
μC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
S
G
S
D
G
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