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| 型号： | IRFU1010ZPBF |
| 厂商： | International Rectifier |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 42A I-PAK |
| 标准包装： | 75 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 42A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7.5 毫欧 @ 42A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 100µA |
| 闸电荷(Qg) @ Vgs： | 95nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2840pF @ 25V |
| 功率 - 最大： | 140W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 长引线，IPak，TO-251AB |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
| 其它名称： | *IRFU1010ZPBF |
PD - 95951A
IRFR1010ZPbF
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
IRFU1010ZPbF
HEXFET ? Power MOSFET
D
V DSS = 55V
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Description
This HEXFET ? Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
Absolute Maximum Ratings
G
S
D-Pak
IRFR1010ZPbF
R DS(on) = 7.5m ?
I D = 42A
I-Pak
IRFU1010ZPbF
Parameter
Max.
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 10V (Silicon Limited)
91
I D @ T C = 100°C Continuous Drain Current, V GS @ 10V
65
A
I D @ T C = 25°C
I DM
Continuous Drain Current, V GS @ 10V (Package Limited)
Pulsed Drain Current
42
360
P D @T C = 25°C Power Dissipation
Linear Derating Factor
140
0.9
W
W/°C
V GS
Gate-to-Source Voltage
± 20
V
E AS (Thermally limited) Single Pulse Avalanche Energy
110
mJ
E AS (Tested )
Single Pulse Avalanche Energy Tested Value
220
I AR
Avalanche Current
See Fig.12a, 12b, 15, 16
A
E AR
T J
T STG
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
-55 to + 175
300 (1.6mm from case )
10 lbf in (1.1N m)
mJ
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
Junction-to-Case
– ––
1.11
R θ JA
R θ JA
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
– ––
– ––
40
110
°C/W
HEXFET ? is a registered trademark of International Rectifier.
www.irf.com
1
09/16/10
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