参数资料
型号: IRFU1010ZPBF
厂商: International Rectifier
文件页数: 11/11页
文件大小: 0K
描述: MOSFET N-CH 55V 42A I-PAK
标准包装: 75
系列: HEXFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 55V
电流 - 连续漏极(Id) @ 25° C: 42A
开态Rds(最大)@ Id, Vgs @ 25° C: 7.5 毫欧 @ 42A,10V
Id 时的 Vgs(th)(最大): 4V @ 100µA
闸电荷(Qg) @ Vgs: 95nC @ 10V
输入电容 (Ciss) @ Vds: 2840pF @ 25V
功率 - 最大: 140W
安装类型: 通孔
封装/外壳: TO-251-3 长引线,IPak,TO-251AB
供应商设备封装: I-Pak
包装: 管件
其它名称: *IRFU1010ZPBF
IRFR/U1010ZPbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters
TR
16.3 ( .641 )
15.7 ( .619 )
TRR
TRL
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
? Repetitive rating; pulse width limited by ? C oss eff. is a fixed capacitance that gives the same charging time
max. junction temperature. (See fig. 11). as C oss while V DS is rising from 0 to 80% V DSS .
? Limited by T Jmax , starting T J = 25°C, L = 0.13mH ? Limited by T Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive
R G = 25 ? , I AS = 42A, V GS =10V. Part not
recommended for use above this value.
? Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
avalanche performance.
? This value determined from sample failure population. 100%
tested to this value in production.
? When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to
application note #AN-994
? R θ is measured at T J approximately 90°C
Data and specifications subject to change without notice.
This product has been designed for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information . 09/2010
www.irf.com
11
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