- 您现在的位置：买卖IC网 > PDF目录299221 > IRFU3706 75 A, 20 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA PDF资料下载
参数资料
| 型号： | IRFU3706 |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 20 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 封装： | LEAD FREE, IPAK-3 |
| 文件页数： | 4/11页 |
| 文件大小： | 220K |
| 代理商： | IRFU3706 |
IRFR/U3706
2
www.irf.com
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
–––
p-n junction diode.
–––
0.88
1.3
V
TJ = 25°C, IS = 36A, VGS = 0V
–––
0.82
–––
TJ = 125°C, IS = 36A, VGS = 0V
trr
Reverse Recovery Time
–––
45
68
ns
TJ = 25°C, IF = 36A, VR=20V
Qrr
Reverse Recovery Charge
–––
65
98
nC
di/dt = 100A/s
trr
Reverse Recovery Time
–––
49
74
ns
TJ = 125°C, IF = 36A, VR=20V
Qrr
Reverse Recovery Charge
–––
78
120
nC
di/dt = 100A/s
Parameter
Min.
Typ.
Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
20
–––
V
VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.021
–––
V/°C Reference to 25°C, ID = 1mA
–––
6.9
9.0
VGS = 10V, ID = 15A
–––
8.1
11
m
VGS = 4.5V, ID = 12A
–––
11.5
23
VGS = 2.8V, ID = 7.5A
VGS(th)
Gate Threshold Voltage
0.6
–––
2.0
V
VDS = VGS, ID = 250A
–––
20
A
VDS = 16V, VGS = 0V
–––
100
VDS = 16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
200
VGS = 12V
Gate-to-Source Reverse Leakage
–––
-200
nA
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Symbol
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
–––
220
mJ
IAR
Avalanche Current
–––
28
A
Avalanche Characteristics
S
D
G
Diode Characteristics
75
280
A
VSD
Diode Forward Voltage
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
RDS(on)
Static Drain-to-Source On-Resistance
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
53
–––
S
VDS = 16V, ID = 57A
Qg
Total Gate Charge
–––
23
35
ID = 28A
Qgs
Gate-to-Source Charge
–––
8.0
12
nC
VDS = 10V
Qgd
Gate-to-Drain ("Miller") Charge
–––
5.5
8.3
VGS = 4.5V
Qoss
Output Gate Charge
–––
16
24
VGS = 0V, VDS = 10V
Rg
Gate Resistance
–––
1.8
–––
td(on)
Turn-On Delay Time
–––
6.8
–––
VDD = 10V
tr
Rise Time
–––
87
–––
ID = 28A
td(off)
Turn-Off Delay Time
–––
17
–––
RG = 1.8
tf
Fall Time
–––
4.8
–––
VGS = 4.5V
Ciss
Input Capacitance
–––
2410 –––
VGS = 0V
Coss
Output Capacitance
–––
1070 –––
pF
VDS = 10V
Crss
Reverse Transfer Capacitance
–––
140
–––
= 1.0MHz
相关PDF资料 |
PDF描述 |
|---|---|
| IRFY140C | 16 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
| IRFZ32 | 25 A, 50 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| IRFZ44VZ | 57 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| IRG4BC20MD-S | 18 A, 600 V, N-CHANNEL IGBT |
| IRG4RC20FPBF | 22 A, 600 V, N-CHANNEL IGBT, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFU3706-701PBF | 功能描述:MOSFET N-CH 20V 75A IPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRFU3706CPBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:SMPS MOSFET |
| IRFU3706PBF | 功能描述:MOSFET 20V 1 N-CH HEXFET 9mOhms 23nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFU3707 | 功能描述:MOSFET N-CH 30V 61A I-PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRFU3707PBF | 功能描述:MOSFET 30V 1 N-CH HEXFET 13mOhms 19nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。