参数资料
型号: IRG4PF40SD
厂商: International Rectifier
英文描述: Fit Rate / Equivalent Device Hours
中文描述: FIT率/等效器件小时
文件页数: 3/35页
文件大小: 112K
代理商: IRG4PF40SD
Introduction
Reliability Engineering _____________________________________
Quality Manager _____________________________________
Date _____________________________________
The reliability report is a summary of the test data collated since the
implementation of the reliability programme. This report will be periodically
updated typically on a quarterly basis. Future publications of this report will
also include as appropriate additional information to assist the user in the
interpretation of the data provided. The programme covers only IGBT /
CoPack
manufactured products at IRGB, Holland Road, Oxted.
reliability data provided in this report are for the package types TO247 and
TO220.
The
Further information regarding reliability data is available in the IR data book
IGBT-3, pages E-65-E-72. This also, is available from the Oxted office.
IGBT / CoPack
Quarterly Reliability Report
Page 3 of 35
相关PDF资料
PDF描述
IRG4PF40UD Fit Rate / Equivalent Device Hours
IRG4PG40FD Fit Rate / Equivalent Device Hours
IRG4PG40KD Fit Rate / Equivalent Device Hours
IRG4PG40MD Fit Rate / Equivalent Device Hours
IRG4PG40SD Fit Rate / Equivalent Device Hours
相关代理商/技术参数
参数描述
IRG4PF40UD 制造商:IRF 制造商全称:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours
IRG4PF50W 制造商:International Rectifier 功能描述:IGBT TO-247
IRG4PF50WD 制造商:International Rectifier 功能描述:IGBT TO-247
IRG4PF50WD-201P 功能描述:IGBT 模块 RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
IRG4PF50WDPBF 功能描述:IGBT 晶体管 900V Warp 20-100kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube