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参数资料
| 型号： | IRHLUB7930Z4 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB) |
| 中文描述： | 抗辐射功率MOSFET的逻辑电平表面贴装（布法罗） |
| 文件页数： | 2/8页 |
| 文件大小： | 180K |
| 代理商： | IRHLUB7930Z4 |
IRHLUB7970Z4
Pre-Irradiation
2
www.irf.com
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
ISM
VSD
trr
QRR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
-0.53
-2.12
-5.0
50
25
V
ns
nC
T
j
= 25°C, IS = -0.53A, VGS = 0V
Tj = 25°C, IF = -0.53A, di/dt
≤
-100A/
μ
s
VDD
≤
-25V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
-60
—
Typ
—
-0.055
Max Units
—
—
Test Conditions
VGS = 0V, ID = -250
μ
A
Reference to 25°C, ID = -1.0mA
BVDSS
V
V/°C
—
—
1.2
VGS = -4.5V, ID = -0.33A
-1.0
0.8
—
—
—
—
—
—
-2.0
—
-1.0 A
-10
VGS = 0V, TJ =125°C
-100
100
3.6
VGS = -4.5V, ID = -0.53A
1.5
nC
1.8
22
VDD = -30V, ID = -0.53A,
— 22 ns
—
27
—
27
8.4
—
Measured from the center of
drain pad to center of source pad
V
VDS = VGS, ID = -250
μ
A
VDS = -10V, IDS = -0.33A
S (
)
VDS = -48V,
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
VGS = -10V
VGS =10V
VDS = -30V
Ciss
Coss
Crss
Rg Gate Resistance
— 29 —
f = 5.1MHz, open drain
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
167
43
10
—
—
—
VGS = 0V, VDS = -25V
f = 1.0MHz
pF
nA
nH
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJA
Junction-to-Ambient
—
—
220
°C/W
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
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