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参数资料
| 型号： | IRHLUB7930Z4 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB) |
| 中文描述： | 抗辐射功率MOSFET的逻辑电平表面贴装（布法罗） |
| 文件页数： | 7/8页 |
| 文件大小： | 180K |
| 代理商： | IRHLUB7930Z4 |
www.irf.com
7
Pre-Irradiation
IRHLUB7970Z4
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
+
I
D
I
G
-3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
-
R
G
I
AS
0.01
t
p
D.U.T
L
V
DS
V
DD
DRIVER
A
15V
-20V
tp
V
(BR)DSS
I
AS
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
Starting T , Junction Temperature ( C)
E
ID
TOP
BOTTOM
-0.24A
-0.34A
-0.53A
相关PDF资料 |
PDF描述 |
|---|---|
| IRHLUB7970Z4 | RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB) |
| IRHM2C50SE | TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A) |
| IRHM3130 | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| IRHM4130 | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| IRHM7130 | RADIATION HARDENED POWER MOSFET THRU-HOLE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHLUB7930Z4SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHLUB7970Z4 | 制造商:International Rectifier 功能描述: 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 60V 0.53A 3PIN UB - Rail/Tube |
| IRHLUB7970Z4_10 | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED |
| IRHLUB7970Z4SCS | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 60V 0.53A 3PIN UB - Rail/Tube |
| IRHLUBC730Z4 | 制造商:International Rectifier 功能描述:MOSFET, RAD HARD, LOGIC LEVEL, N CHANNEL, COTS - Bulk |
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