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| 型号： | IRHLUB7930Z4 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB) |
| 中文描述： | 抗辐射功率MOSFET的逻辑电平表面贴装（布法罗） |
| 文件页数： | 3/8页 |
| 文件大小： | 180K |
| 代理商： | IRHLUB7930Z4 |
www.irf.com
3
Radiation Characteristics
IRHLUB7970Z4
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
-70
-60
-50
-40
-30
-20
-10
0
0
2
4
6
8
10
12
VGS
V
Br
I
Au
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
(μm)
@VGS=
0V
@VGS=
2V
@VGS= @VGS= @VGS= @VGS= @VGS=
4V
5V
6V
@VGS=
10V
7V
8V
Br
I
Au
37
60
82
285
345
357
36.8
32.7
28.5
-60
-60
-60
-60
-60
-60
-60
-60
-60
-60
-60
-60
-60
-60
-
-50
-20
-
-35
-
-
-25
-
-
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Upto 300K Rads (Si)
1
Min
-60
-1.0
—
—
—
Units
Test Conditions
Max
—
-2.0
-100
100
-1.0
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-39) — 1.2
Static Drain-to-Source On-state
Resistance (UB)
V
V
GS
= 0V, I
D
= -250μA
V
GS
= V
DS
, I
D
= -250μA
V
GS
= -10V
V
GS
= 10V
V
DS
= -48V, V
GS
=0V
nA
μA
V
GS
= -4.5V, I
D
= -0.33A
R
DS(on)
V
SD
Diode Forward Voltage
— -5.0
V
V
GS
= 0V, I
D
= -0.53A
— 1.2
V
GS
= -4.5V, I
D
= -0.33A
1. Part numbers IRHLUB7970Z4, IRHLUB7930Z4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHLUB7930Z4SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHLUB7970Z4 | 制造商:International Rectifier 功能描述: 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 60V 0.53A 3PIN UB - Rail/Tube |
| IRHLUB7970Z4_10 | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED |
| IRHLUB7970Z4SCS | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 60V 0.53A 3PIN UB - Rail/Tube |
| IRHLUBC730Z4 | 制造商:International Rectifier 功能描述:MOSFET, RAD HARD, LOGIC LEVEL, N CHANNEL, COTS - Bulk |
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