参数资料
型号: IRHLUB7930Z4
厂商: International Rectifier
英文描述: RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB)
中文描述: 抗辐射功率MOSFET的逻辑电平表面贴装(布法罗)
文件页数: 4/8页
文件大小: 180K
代理商: IRHLUB7930Z4
IRHLUB7970Z4
Pre-Irradiation
4
www.irf.com
Normalized On-Resistance
Vs. Temperature
Typical Output Characteristics
Typical Output Characteristics
Typical Transfer Characteristics
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
0.1
1
10
-D
60
μ
s PULSE WIDTH
Tj = 25°C
VGS
TOP -10V
-7.5V
-5.0V
-4.0V
-3.5V
-3.0V
-2.5V
BOTTOM -2.25V
-
2.25V
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
0.1
1
10
-D
60
μ
s PULSE WIDTH
Tj = 150°C
-
2.25V
VGS
TOP -10V
-7.5V
-5.0V
-4.0V
-3.5V
-3.0V
-2.5V
BOTTOM -2.25V
2
2.2
2.4
2.6
2.8
3
-VGS, Gate-to-Source Voltage (V)
1
10
-D
)
VDS = -25V
60
μ
s PULSE WIDTH
TJ = 150°C
TJ = 25°C
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R
(
D
V
=
I =
GS
-4.5V
-0.53A
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