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参数资料
| 型号： | IRHLUB7930Z4 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB) |
| 中文描述： | 抗辐射功率MOSFET的逻辑电平表面贴装（布法罗） |
| 文件页数： | 8/8页 |
| 文件大小： | 180K |
| 代理商： | IRHLUB7930Z4 |
IRHLUB7970Z4
Pre-Irradiation
8
www.irf.com
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
-10 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
-48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = - 25V, starting TJ = 25°C, L= 25mH
Peak IL = -0.53A, VGS = -10V
ISD
≤
-0.53A, di/dt
≤
-100A/
μ
s,
VDD
≤
- 60V, TJ
≤
150°C
Footnotes:
Case Outline and Dimensions — UB
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER :
205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 09/2004
1. OUTLINE CONFORMS TO MIL-PRF-19500/255L
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: INCH.
NOTES:
2 = SOURCE
3 = DRAIN
1 = GATE
PAD ASSIGNMENTS
3.25 [.128]
2.92 [.115]
2.74 [.108]
2.41 [.095]
1.42 [.056]
1.17 [.046]
3X 0.355 [.014]
MIN.
0.56 [.022]
0.96 [.038]
3X
0.61 [.024]
0.41 [.016]
0.99 [.039]
0.89 [.035]
1.81 [.071]
2.01 [.079]
1
2
3
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