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| 型号： | IRS2118SPBF |
| 厂商： | International Rectifier |
| 文件页数： | 5/26页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSFET/IGBT 1CH 8-SOIC |
| 标准包装： | 95 |
| 配置： | 高端 |
| 输入类型： | 反相 |
| 延迟时间： | 125ns |
| 电流 - 峰： | 290mA |
| 配置数： | 1 |
| 输出数： | 1 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
| 产品目录页面： | 1382 (CN2011-ZH PDF) |
IRS211(7,71,8)(S)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions.
Symbol
VB
VS
VHO
VCC
VIN
dV S /dt
Definition
High-side floating supply voltage
High-side floating supply offset voltage
High-side floating output voltage
Logic supply voltage
Logic input voltage
Allowable offset supply voltage transient (fig.2)
Min.
-0.3
VB - 25
VS - 0.3
- 0.3
- 0.3
---
Max.
625
VB + 0.3
VB + 0.3
25
VCC + 0.3
50
Units
V
V/ns
PD
R θ JA
TJ
TS
TL
Package power dissipation @ T A ≤ +25 ? C
Thermal Resistance, junction to Ambient
Junction temperature
Storage temperature
Lead Temperature (soldering, 10 seconds)
8 lead SOIC
8 lead PDIP
8 lead SOIC
8 lead PDIP
---
---
---
-55
---
0.625
1.0
200
125
150
150
300
W
oC/W
oC
Recommended Operating Conditions
The input/output logic timing diagram is shown in Fig. 1. For proper operation the device should be used
within the recommended conditions. The VS offset rating is tested with all supplies biased at 15 V
differential.
Symbol
VB
VS
VST
VHO
VCC
VIN
Definition
High-Side floating supply absolute voltage
High-side floating supply offset voltage
Transient High side floating supply offset voltage
High-side floating output voltage
Logic supply voltage
Logic input voltage
Min.
VS + 10
?
-50 (??)
VS
10
0
Max.
VS + 20
600
600
VB
20
VCC
Units
V
TA
Ambient Temperature -40 125 oC
? Logic operational for V S of -5 V to +600 V. Logic state held for V S of -5 V to – V BS.
?? Operational for transient negative VS of COM - 50 V with a 50 ns pulse width. Guaranteed by design.
Refer to the Application Information section of this datasheet for more details.
www.irf.com
5
? 2008 International Rectifier
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS2118SPBF | 制造商:International Rectifier 功能描述:MOSFET Driver IC |
| IRS2118STRPBF | 功能描述:功率驱动器IC Sngl Hi Sd Drvr NonInvrt Inpt RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2123SPBF | 功能描述:功率驱动器IC 3-Phase Bridge DRVR 600V 500mA 140ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2123STRPBF | 功能描述:功率驱动器IC Indstrl Non-Invrt Hi Sd Drvr 600V 250mA RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2124SPBF | 功能描述:功率驱动器IC 3-Phase Bridge DRVR 600V 500mA 140ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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