参数资料
型号: IRS2118SPBF
厂商: International Rectifier
文件页数: 6/26页
文件大小: 0K
描述: IC DRIVER MOSFET/IGBT 1CH 8-SOIC
标准包装: 95
配置: 高端
输入类型: 反相
延迟时间: 125ns
电流 - 峰: 290mA
配置数: 1
输出数: 1
高端电压 - 最大(自引导启动): 600V
电源电压: 10 V ~ 20 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 管件
产品目录页面: 1382 (CN2011-ZH PDF)
IRS211(7,71,8)(S)
Dynamic Electrical Characteristics
VBIAS (VCC, VBS) = 15 V, CL = 1000 pF and TA = 25 ° C unless otherwise specified.
Symbol Definition Min. Typ. Max. Units
Test Conditions
t on
Turn-on propagation delay
IRS21171 --- 160 230
IRS211(7,8) --- 125 200
VS = 0V
t off
Turn-off propagation delay
IRS21171
IRS211(7,8)
---
---
160
105
230
180
ns
VS = 600V
t r
t f
Turn-on rise time
Turn-off fall time
---
---
75
35
130
65
Static Electrical Characteristics
VBIAS (VCC, VBS) = 15 V and TA = 25 ° C unless otherwise specified. The VIN, VTH, and IIN parameters
are referenced to COM. The VO and IO parameters are referenced to COM and are applicable to the
respective output leads: HO or LO.
Symbol
V IH
Definition
Input voltage –logic “1”
IRS21171
IRS211(7,8)
Min
2.5
9.5
Typ
---
---
Max
---
---
Units
Test Conditions
V IL
Input voltage – logic “0”
IRS21171
IRS211(7,8)
---
---
0.8
6.0
V
V OH
V OL
I LK
High level output voltage, V BIAS – V O
Low level output voltage, V O
Offset supply leakage current
---
---
---
0.05
0.02
---
0.2
0.1
50
IO = 2mA
V B = V S = 600V
I QBS
Quiescent V BS Supply
IRS211(7,8)
---
50
240
I QCC
I IN+
I IN-
Current
Quiescent V CC Supply
Current
Logic “1” input bias current
Logic “0” input bias current
IRS21171
IRS211(7,8)
IRS21171
IRS2117(1)
IRS2118
IRS2117(1)
IRS2118
---
---
---
---
---
80
70
120
20
---
150
340
240
40
5.0
μA
V IN = 0V or V CC
V IN = V CC
V IN = 0V
V IN = V CC
V BSUV+
V BS supply undervoltage positive going
7.6
8.6
9.6
V BSUV-
V CCUV+
V CCUV-
V BS supply undervoltage negative going
V CC supply undervoltage positive going
V CC supply undervoltage negative going
7.2
7.6
7.2
8.2
8.6
8.2
9.2
9.6
9.2
V
---
V O = 0V
I O+
I O-
Output high short circuit pulsed current
Output low short circuit pulsed current
200
420
290
600
---
mA
V IN Logic “1”
PW ≤ 10 μs
V O = 15V
V IN Logic “0”
PW ≤ 10 μs
www.irf.com
6
? 2008 International Rectifier
相关PDF资料
PDF描述
GMC05DRYN-S13 CONN EDGECARD 10POS .100 EXTEND
GEC17DRYN-S13 CONN EDGECARD 34POS .100 EXTEND
CURM102-G DIODE ULT FAST 1A 100V MINI SMA
CSFM103-G DIODE FAST 300V 1A SOD123
CSFM102-G DIODE FAST 100V 1A SOD123
相关代理商/技术参数
参数描述
IRS2118SPBF 制造商:International Rectifier 功能描述:MOSFET Driver IC
IRS2118STRPBF 功能描述:功率驱动器IC Sngl Hi Sd Drvr NonInvrt Inpt RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IRS2123SPBF 功能描述:功率驱动器IC 3-Phase Bridge DRVR 600V 500mA 140ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IRS2123STRPBF 功能描述:功率驱动器IC Indstrl Non-Invrt Hi Sd Drvr 600V 250mA RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IRS2124SPBF 功能描述:功率驱动器IC 3-Phase Bridge DRVR 600V 500mA 140ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube