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| 型号： | IRS2330JTRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 18/39页 |
| 文件大小： | 0K |
| 描述： | IC BRIDGE DVR 3PH 600V 44-PLCC |
| 标准包装： | 1 |
| 配置： | 3 相桥 |
| 输入类型： | 反相 |
| 延迟时间： | 500ns |
| 电流 - 峰： | 250mA |
| 配置数： | 1 |
| 输出数： | 3 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 44-PLCC（32 引线） |
| 供应商设备封装： | 44-PLCC，32 引线 |
| 包装： | 标准包装 |
| 产品目录页面： | 1382 (CN2011-ZH PDF) |
| 其它名称： | IRS2330JTRPBFDKR |
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IRS233(0,2)(D)(S&J)PbF
V B1
V CC
V B2
V B3
Figure 17: Internal bootstrap MOSFET connection
Figure 18: Bootstrap MOSFET state diagram
A bootstrap MOSFET is suitable for most of the PWM modulation schemes and can be used either in parallel with the external
bootstrap network (i.e., diode and resistor) or as a replacement of it. The use of the integrated bootstrap as a replacement of
the external bootstrap network may have some limitations. An example of this limitation may arise when this functionality is
used in non-complementary PWM schemes (typically 6-step modulations) and at very high PWM duty cycle. In these cases,
superior performances can be achieved by using an external bootstrap diode in parallel with the internal bootstrap network.
Bootstrap Power Supply Design
For information related to the design of the bootstrap power supply while using the integrated bootstrap functionality of the
IRS233(0,2)D family, please refer to Application Note 1123 (AN-1123) entitled “Bootstrap Network Analysis: Focusing on the
Integrated Bootstrap Functionality.” This application note is available at www.irf.com .
For information related to the design of a standard bootstrap power supply (i.e., using an external discrete diode) please refer
to Design Tip 04-4 (DT04-4) entitled “Using Monolithic High Voltage Gate Drivers.” This design tip is available at www.irf.com .
Separate Logic and Power Grounds
The IRS233(0,2)(D) has separate logic and power ground pin (V SS and VSO respectively) to eliminate some of the noise
problems that can occur in power conversion applications. Current sensing shunts are commonly used in many applications
for power inverter protection (i.e., over-current protection), and in the case of motor drive applications, for motor current
measurements. In these situations, it is often beneficial to separate the logic and power grounds.
Figure 19 shows a HVIC with separate V SS and VSO pins and how these two grounds are used in the system. The V SS is
used as the reference point for the logic and over-current circuitry; V X in the figure is the voltage between the ITRIP pin and
the V SS pin. Alternatively, the VSO pin is the reference point for the low-side gate drive circuitry. The output voltage used to
drive the low-side gate is V LO -VSO; the gate-emitter voltage (V GE ) of the low-side switch is the output voltage of the driver
minus the drop across R G,LO .
www.irf.com
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| IRS2330SPBF | 功能描述:功率驱动器IC 600V 3-Phase DRVR 200mA 420mA 500ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2330STRPBF | 功能描述:功率驱动器IC 600V 3Phs Drvr IC w/integr OperAmpl RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2332DJPBF | 功能描述:功率驱动器IC 3-Phase Bridge DRVR 200mA 420mA 500ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2332DJTRPBF | 功能描述:功率驱动器IC 600V 3Phs Drvr IC w/ Intgr BSF & OperAmpl RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2332DSPBF | 功能描述:功率驱动器IC 3-Phase Bridge DRVR 200mA 420mA 500ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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