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参数资料
| 型号： | IS61LPS25636A-250TQ |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | SRAM |
| 英文描述： | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| 中文描述： | 256K X 36 CACHE SRAM, 2.6 ns, PQFP100 |
| 封装： | TQFP-100 |
| 文件页数： | 3/35页 |
| 文件大小： | 562K |
| 代理商： | IS61LPS25636A-250TQ |
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Integrated Silicon Solution, Inc.
11
Rev. I
01/13/09
IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A,
IS61VPS51218A, IS61VPS25636A
PARTIAL TRUTH TABLE
Function
GW
BWE
BWa
BWb
BWc
BWd
Read
H
X
Read
H
L
H
WriteByte1
H
L
H
WriteAllBytes
H
L
WriteAllBytes
L
X
TRUTH TABLE(1-8)
OPERATION
ADDRESS CE CE2
CE2 ZZ ADSP ADSC ADV
WRITE OE
CLK
DQ
DeselectCycle,Power-Down
None
H
X
L
X
L
X
L-H
High-Z
DeselectCycle,Power-Down
None
L
X
L
X
L-H
High-Z
DeselectCycle,Power-Down
None
L
H
X
L
X
L-H
High-Z
DeselectCycle,Power-Down
None
L
X
L
H
L
X
L-H
High-Z
DeselectCycle,Power-Down
None
L
H
X
L
H
L
X
L-H
High-Z
SnoozeMode,Power-Down
None
X
H
X
High-Z
ReadCycle,BeginBurst
External
L
H
L
X
L
L-H
Q
ReadCycle,BeginBurst
External
L
H
L
X
H
L-H
High-Z
WriteCycle,BeginBurst
External
L
H
L
H
L
X
L
X
L-H
D
ReadCycle,BeginBurst
External
L
H
L
H
L
X
H
L
L-H
Q
ReadCycle,BeginBurst
External
L
H
L
H
L
X
H
L-H
High-Z
ReadCycle,ContinueBurst
Next
X
L
H
L
H
L
L-H
Q
ReadCycle,ContinueBurst
Next
X
L
H
L
H
L-H
High-Z
ReadCycle,ContinueBurst
Next
H
X
L
X
H
L
H
L
L-H
Q
ReadCycle,ContinueBurst
Next
H
X
L
X
H
L
H
L-H
High-Z
WriteCycle,ContinueBurst
Next
X
L
H
L
X
L-H
D
WriteCycle,ContinueBurst
Next
H
X
L
X
H
L
X
L-H
D
ReadCycle,SuspendBurst
Current
X
L
H
L
L-H
Q
ReadCycle,SuspendBurst
Current
X
L
H
L-H
High-Z
ReadCycle,SuspendBurst
Current
H
X
L
X
H
L
L-H
Q
ReadCycle,SuspendBurst
Current
H
X
L
X
H
L-H
High-Z
WriteCycle,SuspendBurst
Current
X
L
H
L
X
L-H
D
WriteCycle,SuspendBurst
Current
H
X
L
X
H
L
X
L-H
D
NOTE:
1. Xmeans“Don’tCare.”HmeanslogicHIGH.LmeanslogicLOW.
2. ForWRITE, L means one or more byte write enable signals (BWa-d) and BWEareLOWorGWisLOW.WRITE=Hforall
BWx
, BWE, GWHIGH.
3. BWaenablesWRITEstoDQa’sandDQPa.BWbenablesWRITEstoDQb’sandDQPb.BWcenablesWRITEstoDQc’s and
DQPc.BWdenablesWRITEstoDQd’sandDQPd.DQPaandDQPbareavailableonthex18version. DQPa-DQPdareavail-
ableonthex36version.
4. AllinputsexceptOEandZZmustmeetsetupandholdtimesaroundtherisingedge(LOWtoHIGH)ofCLK.
5. Waitstatesareinsertedbysuspendingburst.
6. ForaWRITEoperationfollowingaREADoperation,OEmustbeHIGHbeforetheinputdatasetuptimeandheldHIGHduring
the input data hold time.
7. ThisdevicecontainscircuitrythatwillensuretheoutputswillbeinHigh-Zduringpower-up.
8. ADSPLOWalwaysinitiatesaninternalREADattheL-HedgeofCLK.AWRITEisperformedbysettingoneormorebytewrite
enable signals and BWELOWorGWLOWforthesubsequentL-HedgeofCLK.SeeWRITEtimingdiagramforclarification.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61LPS25636A-250TQI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS25636B-200TQLI | 功能描述:IC SRAM 9MBIT 200MHZ 100LQFP 制造商:issi, integrated silicon solution inc 系列:- 包装:托盘 零件状态:在售 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:200MHz 接口:并联 电压 - 电源:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C（TA） 封装/外壳:100-LQFP 供应商器件封装:100-LQFP（14x20） 标准包装:72 |
| IS61LPS25672A | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS61LPS25672A-250B1 | 功能描述:静态随机存取存储器 18Mb 256Kx72 250MHz Sync 静态随机存取存储器 3.3v RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61LPS25672A-250B1I | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
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