参数资料
型号: IS61LPS25636A-250TQ
厂商: INTEGRATED SILICON SOLUTION INC
元件分类: SRAM
英文描述: 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
中文描述: 256K X 36 CACHE SRAM, 2.6 ns, PQFP100
封装: TQFP-100
文件页数: 6/35页
文件大小: 562K
代理商: IS61LPS25636A-250TQ
14
Integrated Silicon Solution, Inc.
Rev. I
01/13/09
IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A,
IS61VPS51218A, IS61VPS25636A
POWER SUPPLY CHARACTERISTICS(1) (OverOperatingRange)
-250
-200
-166
MAx
Symbol Parameter
Test Conditions
Temp. range
x18
x36
x18
x36
x18 x36
Unit
Icc
ACOperating
DeviceSelected,
Com.
275 275
250 250
225 225
mA
Supply Current
OE
= VIh, ZZ ≤ VIl,
Ind.
300 300
275 275
250 250
All Inputs ≤ 0.2V or
Auto.
300 300
≥ Vdd – 0.2V,
CycleTime≥ tkc min.
Isb
StandbyCurrent
DeviceDeselected,
Com.
150 150
mA
TTLInput
Vdd = Max.,
Ind.
150 150
150 150
150 150
All Inputs ≤ VIl or ≥ VIh,
AuTO.
200 200
ZZ ≤ VIl, f=Max.
IsbI
StandbyCurrent
DeviceDeselected,
Com.
100 100
mA
cMOs Input
Vdd = Max.,
Ind.
105 105
105 105
105 105
VIN ≤Vss +0.2Vor
Auto.
130 130
≥Vdd –0.2V
f=0
Note:
1. MODEpinhasaninternalpullupandshouldbetiedtoVddorVss.Itexhibits±100Amaximumleakagecurrentwhentiedto≤
Vss+0.2Vor≥Vdd–0.2V.
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IS61LPS25672A-250B1 功能描述:静态随机存取存储器 18Mb 256Kx72 250MHz Sync 静态随机存取存储器 3.3v RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray
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