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参数资料
| 型号： | IS62UP25616LL-55BI |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | SRAM |
| 英文描述： | 256K X 16 STANDARD SRAM, 55 ns, PBGA48 |
| 封装： | MINI, BGA-48 |
| 文件页数： | 1/13页 |
| 文件大小： | 83K |
| 代理商： | IS62UP25616LL-55BI |
Integrated Silicon Solution, Inc. — 1-800-379-4774
1
TARGET SPECIFICATION SR070-0t
05/01/99
FEATURES
Voltage range options
-- 1.6V to 2.0V: IS62UT25616
-- 1.8V to 2.2V: IS62US25616
-- 2.3V to 2.7V: IS62UR25616
-- 2.7V to 3.3V: IS62UP25616
Battery backup (SL/LL version)
-- 1.0V (min.) data retention
Access times: 55, 70, and 100 ns
Fully static operation and tri-state outputs
Industrial temperature available
Available in 48-ball mini BGA and
44-pin sTSOP (Type II)
IS62Ux25616 Series
256K x 16 LOW VOLTAGE, LOW POWER
CMOS STATIC RAM
DESCRIPTION
The
ISSI IS62Ux25616 series is a low voltage, 262,144
words by 16 bits, CMOS SRAM. It is fabricated using
ISSI's low voltage, six transistor (6T), CMOS technology.
The series is targeted to satisfy the demands of the state-
of-the-art technologies such as cell phones and pagers.
When
CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels. Additionally, easy
memory expansion is provided by using Chip Enable and
Output Enable inputs,
CE and OE. The active LOW Write
Enable (
WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (
UB) and Lower
Byte (
LB) access.
The IS62Ux25616 series is packaged in the 48-ball mini
BGA and the 44-pin sTSOP (Type II).
ADVANCE INFORMATION
MAY 1999
ISSI
PRODUCT SERIES OVERVIEW
Standby Current (
A)
Part No.
Voltage (V)
Speeds (ns)
Active ICC (mA)
LL
SL
Temperature (
°C)
IS62UP25616
3.0,
±0.3
55, 70, 100
25 @ 70 ns
10
2
0 to 70
IS62UP25616(1)
3.0,
±0.3
55, 70, 100
25 @ 70 ns
10
2
40 to 85
IS62UR25616
2.5,
±0.2
55, 70, 100
15 @ 70 ns
10
2
0 to 70
IS62UR25616(1)
2.5,
±0.2
55, 70, 100
15 @ 70 ns
10
2
40 to 85
IS62US25616
2.0,
±0.2
55, 70, 100
10 @ 70 ns
10
2
0 to 70
IS62US25616(1)
2.0,
±0.2
55, 70, 100
10 @ 70 ns
10
2
40 to 85
IS62UT25616
1.8,
±0.2
55, 70, 100
10 @ 70 ns
10
2
0 to 70
IS62UT25616(1)
1.8,
±0.2
55, 70, 100
10 @ 70 ns
10
2
40 to 85
Note:
1. Current value is max.
TARGET SPECIFICATION
This document is a TARGET SPECIFICATION only. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible
product. We assume no responsibility for any errors which may appear in this publication. Copyright 1999, Integrated Silicon Solution, Inc.
2231 Lawson Lane Santa Clara, CA 95054-3311 1-800-379-4774 Fax: (408) 588-0806
e-mail: sales@issiusa.com www.issiusa.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IS62VV25616L | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM |
| IS62VV25616LL-70M | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x16 SRAM |
| IS62VV25616LL-70MI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x16 SRAM |
| IS62VV25616LL-70T | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM |
| IS62VV25616LL-70TI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM |
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