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参数资料
| 型号： | IS62UP25616LL-55BI |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | SRAM |
| 英文描述： | 256K X 16 STANDARD SRAM, 55 ns, PBGA48 |
| 封装： | MINI, BGA-48 |
| 文件页数： | 12/13页 |
| 文件大小： | 83K |
| 代理商： | IS62UP25616LL-55BI |
IS62Ux25616 SERIES
8
Integrated Silicon Solution, Inc. — 1-800-379-4774
TARGET SPECIFICATION SR070-0T
05/01/99
ISSI
TARGET SPECIFICATION
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range)
-55
-70
-100
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
tWC
Write Cycle Time
55
—
70
—
100
—
ns
tSCE
CE to Write End
45
—
60
—
80
—
ns
tAW
Address Setup Time to Write End
45
—
60
—
80
—
ns
tHA
Address Hold from Write End
0
—
0
—
0
—
ns
tSA
Address Setup Time
0
—
0
—
0
—
ns
tPWB
LB, UB Valid to End of Write
45
—
60
—
80
—
ns
tPWE1
WE Pulse Width
45
—
60
—
80
—
ns
tPWE2
WE Pulse Width
45
—
60
—
80
—
ns
tSD
Data Setup to Write End
25
—
30
—
40
—
ns
tHD
Data Hold from Write End
0
—
0
—
0
—
ns
tHZWE(3)
WE LOW to High-Z Output
—
30
—
30
—
40
ns
tLZWE(3)
WE HIGH to Low-Z Output
5
—
5
—
5
—
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0.4V to
2.2V and output loading specified in Figure 1.
2. The internal write time is defined by the overlap of
CE LOW and UB or LB, and WE LOW. All signals must be in valid states
to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to
the rising or falling edge of the signal that terminates the write.
3. Tested with the load in Figure 1. Transition is measured
±200 mV from steady-state voltage. Not 100% tested.
t RC
t OHA
t AA
t DOE
t LZOE
t ACE
t LZCE
t HZOE
HIGH-Z
DATA VALID
t HZB
ADDRESS
OE
CE
LB, UB
DOUT
t HZCE
t BA
t LZB
AC WAVEFORMS
READ CYCLE NO. 2(1,3)
Notes:
1.
WE is HIGH for a Read Cycle.
2. The device is continuously selected.
OE, CE, UB, or LB = VIL.
3. Address is valid prior to or coincident with
CE LOW transition.
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相关代理商/技术参数 |
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|---|---|
| IS62VV25616L | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM |
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| IS62VV25616LL-70T | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM |
| IS62VV25616LL-70TI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM |
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