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参数资料
| 型号： | IS62UP25616LL-55BI |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | SRAM |
| 英文描述： | 256K X 16 STANDARD SRAM, 55 ns, PBGA48 |
| 封装： | MINI, BGA-48 |
| 文件页数： | 9/13页 |
| 文件大小： | 83K |
| 代理商： | IS62UP25616LL-55BI |
IS62Ux25616 SERIES
Integrated Silicon Solution, Inc. — 1-800-379-4774
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TARGET SPECIFICATION SR070-0T
05/01/99
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ISSI
TARGET SPECIFICATION
AC TEST CONDITIONS (Over Operating Range)
Parameter
Unit
Input Pulse Level(1)
IS62UP25616
0.4V to 2.2V
IS62UR25616
0.4V to 2.2V
IS62US25616
0.4V to 1.8V
IS62UT25616
0.4V to 1.6V
Input Rise and Fall Times
5 ns
Input and Output Timing
IS62UP25616
1.5V
and Reference Level
IS62UR25616
1.1V
IS62US25616
0.9V
IS62UT25616
0.8V
Output Load (all test parameters except in Note 2)
CL1 = 30 pF
(see Figure 1)
+ 1TTL Load
Output Load(1) (all High-Z and Low-Z parameters)
CL2 = 5 pF
(see Figure 1)
Notes:
1. Including jig and scope capacitance.
2. VTM = 2.8V for Vcc = 3.0V
± 0.3V
VTM = 2.3V for Vcc = 2.5V
± 0.2V
VTM = 1.8V for Vcc = 2.0V
± 0.2V
VTM = 1.6V for Vcc = 1.8V
± 0.2V
AC TEST LOADS
3070
3150
DOUT
CL1,
CL2
VTM
Figure 1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IS62VV25616L | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM |
| IS62VV25616LL-70M | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x16 SRAM |
| IS62VV25616LL-70MI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x16 SRAM |
| IS62VV25616LL-70T | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM |
| IS62VV25616LL-70TI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM |
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